绝缘膜

MIM薄膜二极管Ta2O5绝缘膜的AFM分析及其I-V特性研究

AFM Analysis of Ta_2O_5 Insulator Film and the I V Characteristics Investigation of the MIM Thin Film Diode

热处理对MIM薄膜二极管Ta2O5绝缘膜微结构及其IU特性的影响

Influence of Heat-treatment on the Microstructure of Ta_2O_5 Insulator Film and the I-U Characteristics of the MIM Thin Film Diode

阳极氧化法制备Ta2O5绝缘膜及性能研究

Fabrication and characterization of Ta_2O_5 dielectric films by anodic oxidation

用于高温压力传感器的AlN绝缘膜的研究

Study of AlN Insulated Film for High Temperature Pressure Sensor

超薄的金属/LB绝缘膜/半导体结构的C&V和I-V特性

C-V and I-V characteristics of ultrathin metal / lb insulating films / semiconductor structure

LB绝缘膜在微电子技术中的应用

Applications of LB Insulating Films to Microelectronic Technology

MOS结构中光注入时外电路电流特性与绝缘膜中陷阱俘获截面密切相关。

The external circuit current of photoinjection in MOS structures is closely related to the capture cross section of traps .

Fe-Cr-Al电热合金液浸原位生成绝缘膜的研究

Investigation on Preparation of In-situ Insulation Film on Fe-Cr-Al Electrical Heating Alloy

Fe-Cr-Al电热合金表面原位绝缘膜的生长动力学问题

Investigation on Growth Kinetics and Morphology of In-Situ Insulating Film on Fe-Cr-Al Electrical Heating Alloy

通过改造添加系统，使用浆液计量罐计量TiO2EG浆液，成功制成电工绝缘膜用TiO2含量高的聚酯切片。

By the modification of the adding system , the TiO_2-EG slurry was metered with slurry metered tank , the high-TiO_2 PET chip use for electrical insulation film were successfully developed .

同时，利用SEM、XRD、EDS等手段，测试和分析了表面绝缘膜的形貌、组成和形成机理。

At the same time , the use of SEM , XRD , EDS and other means , test and analysis of the surface insulating film morphology , composition and formation mechanism .

利用气相反应法在Fe-Cr-Al电热合金表面原位生成了耐高温的绝缘膜。

In this paper , the in-situ forming of insulating film by gas-reaction on Fe-Cr-Al alloy for heating conductor is discussed .

利用高频CV测量得到MIS结构的平带电压，根据陷阱与平带电压偏移量之间的关系，得到陷阱在绝缘膜中的分布。

Get the flat band voltage of the MIS structure by using high frequency CV measurement , get the trap distribution in the insulator film by calculate the relation between traps location and the flat band voltage offset .

本文论述了薄膜磁敏元件对基片的要求，依此要求选择硅和高密度铁氧体为基片，上面制备SiO2作绝缘膜。

Requirement of Substrate in thin film magneto sensor is reported . In accordance with the requirement , We select silicon and ferrite of high density as substrate . SiO2 is made insulation film on the substrate .

采用多弧离子镀方法在镀有绝缘膜的高速钢基体上制备NiCr、NiSi热电偶薄膜，并分析了薄膜成分；

NiCr / NiSi thin films are plated on the insulated HSS cutter . Static calibration of the thin film thermocouple is carried out .

当电压为1600~1850V、温度为60~62℃、电极间距为8~10mm、沉积时间大于36h时，才能在钛合金表面得到完整的DLC绝缘膜。

Only when the voltage is 1600 ~ 1850V , the temperature is 60 ~ 62 ℃, the distance between electrodes is 8 ~ 10mm and the deposition time is more than 36 hours , an insulating DLC film can form on the Ti alloy surface .

这种结构最突出的优点就是巨磁阻膜LCMO不影响绝缘膜&PZT栅的结构和介电性质。

This arrangement has an advantage that CMR film does not influence the structural and dielectric properties of the gate insulator-PZT , as would be the case if the PZT were grown on top of the CMR film .

正带电绝缘膜发射的二次电子的轨迹与返回特性

Trajectories and Return Properties of Secondary Electrons Emitted from an Insulator Film Positively Charged

聚酰亚胺绝缘膜的真空性能及在电真空器件中的应用研究

Study of Vacuum Properties of Polyimide Insulation Film and Its Application in Vacuum Devices

普克尔斯效应反射法测量绝缘膜表面放电电荷的分布

Measuring surface discharge charge distribution on insulation films by reflection method of Pockels effect

用氮化硅作绝缘膜的砷化镓绝缘栅场效应晶体管的研究

Study of GaAs MIS diode and depletion mode MISFET using silicon nitride as insulator

用光注入电流衰减测量绝缘膜中陷阱的俘获截面

Measurements of Capture Cross Section of Traps in Insulating Films by Photoinjection Current Decay

另外研究了表面质量、氧压、反应时间及合金元素等因素对绝缘膜击穿性能的影响。

Several factors that have an effect on breakdown characteristics of insulating film are also investigated .

总之，上述三种方法都可以在铁铬铝电热合金表面制备绝缘膜。

Above all , these three methods can be heating in the Fe-Cr-Al alloy prepared insulating film .

绝缘膜负带电时的表面局部电场与二次电子返回特性

Local Field of Surface and Redistribution Properties of Secondary Electrons Emitted from Insulating Thin Film with Negative Charge

本论文主要研究了高性能复合栅绝缘膜的制备及性能测试。

In this paper , we focus on preparation of high quality double layer insulator film and their performance measurement .

直接氧化过程中，考察了时间和温度对制备表面绝缘膜的影响规律。

In direct oxidation process , the effects of time and temperature on the preparation of the surface insulating film are investigated .

液浸熔盐制备过程中，考察了熔盐的时间对制备表面绝缘膜的影响规律。

In preparation of liquid molten salt leaching process , the time on the preparation of molten salt surface insulation film were investigated .

在测量绝缘膜漏电流的过程中，发现漏电流随着扫描次数的增加而降低，表明绝缘膜内存在电子陷阱。

In the process of leakage current measurement , leakage current decrease as the scan times increase , show there are electron traps .

在工业方面，主要用于电器绝缘膜、电缆标志带、静电膜、绝缘材料、装饰品。

For industrial use , it is mainly for dielectric film of electrical appliance , cable markers , static-insulating materials , and ornaments .