光电子发射

  • 网络photoemission;photoelectron emission
光电子发射光电子发射
  1. 利用飞秒双光子光电子发射研究GaAs(100)的自旋动力学过程

    Spin dynamics of GaAs ( 100 ) by two - photon photoemission

  2. Ti(17)的态密度图表明,由氢而产生的带位于Fcrmi能级下约6.5ev处,光电子发射的结果是定性相符的。

    Density of states diagrams for Ti_ ( 17 ) show a hydrogen induced band at approxi-matel 6.5.ev below the Fermi level in agreement with photoemission results .

  3. 对硫化锌粉料、硫化锌半导体微晶薄膜进行了X射线光电子发射谱剖析。

    On the basis of analysis on XPS ( X-ray photoelectron spectroscopy ) technique the information on electron states of ZnS powder , ZnS thin film surface and internal layer is obtained .

  4. 此外,文中还介绍了用XPS测量厚度的实验步骤,包括样品方位角和光电子发射角的选择以及XPS数据处理方法。

    Besides , this introduction covers the following : the experimental procedures for the XPS measurements , including the selection of the azimuthal angle and the emission angle , and the method of the XPS data processing .

  5. 界面处有硅化物M2Si存在,对界面处金属芯态谱随光电子发射角变化的反常现象作了初步探讨。

    The result shows the existence of silicide of M_2 Si at the in-terface . Anomalous phenomenon of the metal core spectra change with photoelectron emis-sion angle has been discussed briefly .

  6. 砷化镓表面自旋极化光电子发射

    The spin polarized effect of photoelectrons emitted from GaAs surface

  7. 硅悬键表面态的晶向关系&光电子发射研究

    Orientation Dependence of Dangling - Bond Surface States on Silicon

  8. 透射式光阴极的厚度,直接影响光阴极的光电子发射效率和光谱响应。

    The thickness of transmission-mode photocathode affects directly its photoelectric efficiency and spectral response .

  9. 溅射制备ZnS:Er~(3+)薄膜的光电子发射结构

    Photoelectron Emissive Structures in ZnS : Er 3 + Thin Film Prepared by RF Magnetron Sputtering

  10. 硫化锌的光电子发射结构

    Photoemissive structure in zinc sulfide

  11. 介绍了Ⅰ代和Ⅱ代超快电子衍射系统的电子光学设计过程,包括光电子发射过程的抽样;电子枪内电场、磁场的计算;

    The electron optical design process of UED system generation I and generation II is introduced , and the main works of which include sampling of the emitting process of electrons , calculation of the electrical and magnetic field and calculation of the trajectories of electrons .

  12. 且其一维、准一维材料在光电子、场发射器件和微机械等方面也具有极大的应用潜能,因此,SiC纳米线具有重要的研究价值。

    In addition , due to the unique performances of one dimension and quasi one-dimension materials of SiC , SiC whiskers has great potential for application in the field of opto-electronic devices , field emission devices and micro-machine .

  13. 论文的最后一部分对具有非对称微腔结构的有机光电子器件:顶发射型发光二极管和光电二极管的光学特性进行了详细分析和优化。

    The work of the last part of this thesis focuses on theoretical analysis and optimization of the organic / polymeric optoelectronic devices with asymmetric microcavity structurers : top-emitting light emitting diodes ( TELED 's ) and photodiodes .