二维电子气

结果发现，当rs二维电子气的基态有可能发生不稳。

It is found that , for rs 2-dimensional electron gas can be unstable .

AlxGa（1-x）N/GaN异质结构中二维电子气的自旋性质

Spin Properties of the Two-Dimensional Electron Gas in Al_xGa_ ( 1-x ) N / GaN Heterostructures

n-Hg（0.80）Mg（0.20）Te界面积累层中二维电子气的输运特性研究

Study on transport properties of two-dimensional electron gases in n-hg_ ( 0.80 ) mg_ ( 0.20 ) te interface accumulation layer

在变缓冲层高迁移率晶体管（MMHEMT）器件中，二维电子气的输运性质对器件性能起着决定作用。

Transport properties of two-dimensional electron gas ( 2DEG ) are crucial to metamorphic high-electron-mobility transistors ( MM-HEMT ) .

结果发现，当rs边缘能变负，从而表明在高密度下，二维电子气的基态有可能发生不稳。

It is found that , for rs edge energy becomes negative , indicating that at high enough density the ground state of the 2-dimensional electron gas can be unstable .

HEMT结构材料中二维电子气的输运性质研究

Study on Transport Properties of Two Dimensional Electron Gas in HEMT Structure

Siδ掺杂Al＿xGa＿（1&x）As／GaAs异质结二维电子气的SdH振荡研究

Study of SDH oscillations of 2-D electron gas in Si δ - doped alxga_ ( 1-x ) as / gaas heterojunction

分子束外延选择性掺杂的GaAs/N-AlxGa（1-X）As异质结中的二维电子气

Two-Dimensional Electron Gas in MBE Grown Selectively Doped GaAs / N-AlGaAs Heterostructures

肖特基C-V法研究AlxGa（1-x）N/GaN异质结界面二维电子气

Investigation on Two-Dimensional Electron Gas in Al_xGa_ ( 1-x ) N / GaN Heterostructures by Using Schottky C-V Measurement

利用变温Hall测量研究了重掺杂InGaAs/InAlAs单量子阱中二维电子气，发现在量子阱中由于存在电子对称态和反对称态导致纵向电阻出现拍频现象。

Beating patterns in longitudinal resistance caused by the symmetric and antisymmetric states were observed in a heavily doped InGaAs / InAlAs quantum well by using variable temperature Hall measurement .

电子迁移率（μn）和二维电子气（2-DEG）面密度（ns）是影响InPPHEMT器件功率性能的两个重要因素。

Two-dimensional electron gas density and electron mobility are two important factors which affect the power performance of InP PHEMT devices .

高电子迁移率GaAs／AlxGa（1－x）As二维电子气（2DEG）异质结结构参数优化研究

Optimization of Structure Parameters of High Mobility GaAs / Al_xGa_ ( 1-x ) As Two Dimensional Electron Gas ( 2DEG ) Heterostructure

在大漏极电压条件下，沟道电子易于注入到GaN缓冲层中，并被缓冲层中的陷阱所俘获，耗尽二维电子气，从而导致电流崩塌效应。

Under high drain voltage condition , the results proved that channel electrons are easily ejected into GaN buffer layer and be trapped to induce current collapse .

GaAs/AlGaAs异质结中二维电子气子能带的Landau能级耦合

Resonant subband Landau level coupling for high lying subbands of two dimensional electron gases in gaas / algaas heterojunction

Ⅲ族氮化物HFET中的电流崩塌和二维电子气

Current collapse and two dimensional electron gas in ⅲ - nitride HFET

量子化极限情况下MOS反型层二维电子气定域态电子电导率σ（xx）的低频效应

The low frequency effects of transverse conductivity of electron in localized state of the two dimensional electron gas in MOS inversion layer under the condition of quantized limit

本文综述了GaAs-Al（？）Ga（1-（））As异质结界面内二维电子气在低温下的量子霍耳效应理论。

This paper reviews the theory of quantized Hall effect of two-dimensional electron gas in GaAs-Al_xGa_ ( 1-x ) As heterojunction at low temperature .

用射频等离子体辅助分子束外延技术（RF-MBE）在c面蓝宝石衬底上外延了高质量的GaN膜以及AlN/GaN超晶格结构极化感应二维电子气材料。

High-quality GaN films and AlN / GaN polarization-induced two-dimensional electron gas ( 2DEG ) materials are grown on ( 0001 ) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy ( RF-MBE ) .

RF-MBE生长AlN/GaN超晶格结构二维电子气材料

Two-Dimensional Electron Gas Materials with AlN / GaN Superlattice Structure Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

在低温和强磁场下，通过磁输运测量研究了不同Al组分调制掺杂AlxGa（1-x）N/GaN异质结二维电子气（2DEG）的磁电阻振荡现象。

Magnetotransport properties of two-dimensional electron gases ( 2DEG ) in Al_xGa_ ( 1-x ) N / GaN heterostructures with different Al compositions are investigated by magnetotransport measurements at low temperatures and in high magnetic fields .

近年来，表面声波（SAW）通过压电效应与GaAs/AlxGa（1-x）As异质结中二维电子气（2DEG）的相互作用受到越来越多的关注。

The interaction of a surface acoustic wave ( SAW ) with a two-dimensional electron gas ( 2DEG ) in a GaAs / Al_xGa_ ( 1-x ) As heterojunction through piezoelectric effect has recently attracted much attention .

C-V特性曲线随退火温度增大向右移动，从二维电子气耗尽电压绝对值减小反映了肖特基势垒的提高。

On the other hand , the C-V curves moved to the right and the reduction of absolute value of 2D electron gas depletion voltage proved that the Schottky barrier height was elevated when the annealing temperature increased .

利用泊松方程以及异质结能带理论，通过费米能级-二维电子气浓度的线性近似，推导了基于双异质结双平面掺杂的HEMT器件的电荷控制模型。

By using linear E f n s approximation , a new analytical charge control model of the double heterojunction double planar doped high electron mobility transistor ( HEMT ) is deduced based on Poisson 's equation .

文中综述了族氮化物及其二维电子气的输运特性，讨论了从输运特性出发，优化HFET性能的问题。

The transport properties of ⅲ - nitrides and their two-dimensional electron gas are summarized and the prospect of optimization of HFET from this investigation is discussed in this paper .

在三角阱的基础上，采用无规相近似方法（RPA）、介电函数张量理论和线性响应理论来研究二维电子气沟道中等离激元的性质。

On the basis of the triangle trap , the nature of plasmon in the two dimensional electron gas has been studied through the phase approximation method ( RPA ), dielectric function tensor theory and linear response theory .

由其制作的AlGaN/GaN异质结场效应晶体管（HFET），即使没有经过掺杂，但由于其强的极化效应，在其异质结的界面处也有非常高密度的二维电子气（2DEG）。

Heterojunction field-effect transistor ( HFET ) produced by AlGaN / GaN , even without doping , has a very high density of two-dimensional electron gas ( 2DEG ) due to its strong polarization effects in the hetero-junction interface .

通过在低温和强磁场下的磁输运测量研究了非故意掺杂Al0.22Ga0.78N/GaN异质结二维电子气（2DEG）的磁电阻振荡现象。

Magnetoresistance oscillations of the two-dimensional electron gas ( 2DEG ) in unintentionally doped Al_ ( 0.22 ) Ga_ ( 0.78 ) N / GaN heterostructures were investigated by means of magnetotransport measurements at low temperatures and high magnetic fields .

周期调制磁场中二维电子气的电学特性

Electrical Properties of Two-Dimensinal Electron Gas under General One-Dimensional Periodic Magnetic Field

Ⅲ族氮化物异质结构二维电子气研究进展

Progress in two-dimensional electron gas in group - ⅲ - nitride heterostructures

窄禁带稀磁半导体二维电子气的磁阻振荡研究

Magnetoresistance oscillation of two-dimensional electrons gas in narrow gap dilute magnetic semiconductor