zmr

The structure and electrical properties of silicon film after ZMR are studied .

对区熔后的硅膜结构和电学性质进行了研究。

The different O. Different ZMR processes are studied .

研究了不同的区熔工艺，对比了其区熔后的表面形貌。

Detection of Molten Zone During SOI - ZMR Process

绝缘层上硅膜-红外区熔再结晶过程中熔区的检测

ZMR ( zone melting recrystallization ) apparatus is introduced , and the processing characteristic of ZMR is studied .

研究了区熔再结晶（ZMR）设备及其工艺特点。

Results show that the grain size of polycrystalline silicon thin films increased to several centimeters long and millimeters width after ZMR .

研究结果表明：ZMR对籽晶层的区融、结晶效果比较理想，晶粒尺寸增大到厘米级长、毫米级宽；

The ZMR ( Zone Melting Recrystallization ) technique was next introduced to improve the smoothness and crystal quality of SSP and to further improve the quality of the thin film .

为了改善硅带衬底的质量，引入区熔再结晶的方法，期望将其表面平整度及结晶质量进一步提高，进而改善以其为衬底的多晶硅薄膜质量。

By means of zone melting recrystallization ( ZMR ) method , polycrystalline silicon thin films with large grains and relative high carrier mobility were obtained , which could act as a seeding layer .

提出了一种简化的区熔再结晶方法，利用这种方法在非硅衬底获得了晶粒尺寸达到毫米级、致密的籽晶层。

In this paper , RTCVD method is used not only to prepare silicon seeding layer , which is treated following by ZMR to enlarge the grain size , but also to grow the polycrystalline silicon film as active layer .

本文采用RTCVD法制备硅籽晶层，然后通过ZMR增大籽晶层晶粒，再用RTCVD外延多晶硅活性层。

Because of their different catalytic activities and chemical properties , different types of ZMR can be adapted to meet various needs of different catalytic reaction . They will probably find wide applications in the construction of catalysis , photonic or electronic materials .

由于具有不同的催化活性以及物化性质，不同类型的沸石微囊反应器可以适应不同催化反应的需求，可能在催化，光电材料等领域具有广泛的用途。

In this paper , such effective techniques as Heat Sink structure and Grooved structure have been proposed to localize grain-boundaries during Zone-Melting - Recrystallization ( ZMR ) . These techniques are the key points of ZMR-SOI technology .

两种行之有效的晶粒间界限制技术：热沉结构和硅槽结构使区熔再结晶SOI实现定域无缺陷，这是采用区熔技术制备SOI的技术关键和难点所在。

A faceted defect has been found in some ZMR SOI multilayer composite materials as a result of melting and recrystallization of silicon substrate at some isolated spots on its upper surface durin (?) the ZMR processing .

在ZMRSOI多层复合材料中观察到一种小平面缺陷，这种缺陷是硅衬底表面在ZMR处理过程中某些局部范围内发生熔化和再结晶的结果。

Due to using ZMR method , consistent tropism silicon thin film was obtained , it provides a fine base for fabrication of thin film solar cells . The best efficiency of polycrystalline silicon thin film solar cells reached up to 10 21 % .

由于采用了区熔再结晶（ZMR）的方法，获得了取向一致的多晶硅薄膜，为薄膜电池的制备打下了良好的基础，转换效率达到1021%。

Moreover , the crystal size of the thin film on SSP ribbon via ZMR is more than 100m , but there is not yet enough evidence to prove that ZMR greatly improves the crystal quality of Poly-Si thin film .

在区熔硅带衬底上沉积的多晶硅薄膜晶粒尺寸在100μm以上，但暂无明显证据证明区熔对薄膜结晶质量有显著提高。

After growing SiO 2 layer with a certain thickness on heavy diffusion inactive C Si wafer , opening windows , then fabricating polycrystalline silicon thin film solar cells on it with Rapid Thermal Chemical Vapor Deposition ( RTCVD ) and Zone Melt Recrystallization ( ZMR ) method .

在重掺杂非活性单晶硅片上生长一定厚度的SiO2，开窗口后作为衬底，利用快速热化学气相沉积（RTCVD）及区熔再结晶（ZMR）方法制备多晶硅薄膜太阳电池。