zinc blende structure

XRD results indicated that the products are of cubic zinc blende structure .

XRD研究表明，产物为立方闪锌矿结构；

With increasing pressure , the wurtzite structre was transformed to zinc blende structure at 11.2 GPa .

压力达到11.2GPa时，纳米硫化锌空心球中的纤锌矿结构全部转变为闪锌矿结构。

The study indicates that the film belongs to a zinc blende structure .

分析表明，该薄膜的结构符合闪锌矿的特征。

Influence of the chemical bond on the energy bands of the zinc blende structure

化学键对闪锌矿型晶体能带结构的影响

The synthesis and characterization of ZnS nanowires with zinc blende structure

立方闪锌矿结构ZnS纳米线的合成与表征

Synthesis and Characterization of Monodisperse CdSe Quantum Dots with Zinc Blende Structure

单分散闪锌矿型CdSe量子点的合成及表征

CdSe QDs of zinc blende structure have been synthesized by a simple ethylenediamine-assisted method .

采用简单的乙二胺辅助方法合成出闪锌矿型结构的CdSeQDs。

A mechanism of crystal structure transformation of CdSe QDs has been proposed and the formation of zinc blende structure is discussed .

提出了CdSeQDs晶体结构转变的机制并对闪锌矿型结构CdSeQDs的形成进行了讨论。

Optical Phonon Behavior of Mix-Crystal Zn_ ( 1-x ) Mn_xSe with Zinc Blende Structure

闪锌矿结构Zn（1－x）MnxSe混晶光学声子行为

This article also discusses the electrical properties of zinc blende structure InN thin films and presents the potential application of InN thin films for devices ( mainly for high electron mobility transistors ) .

同时也涉及了部分立方闪锌矿结构InN的电学特性和InN在器件（主要是高电子迁移率晶体管器件）上的潜在应用。

The energy band , geometry parameters , density of states , and cohesive energy of CdSe with zinc blende structure , wurtzite structure , rock-salt structure , and CsCl structure are calculated , respectively .

分别计算了闪锌矿结构，纤锌矿结构，岩盐结构和CsCl结构CdSe的能带、几何参数、电子态密度和内聚能。

The obtained results indicate that CdSe with zinc blende structure and wurtzite structure are direct band gap semiconductors ; CdSe with rock-salt structure is indirect band gap semiconductor ; CdSe with CsCl structure is semimetal .

结果表明，闪锌矿结构和纤锌矿结构CdSe为直接带隙半导体材料；盐岩结构CdSe为间接带隙半导体材料；CsCl结构CdSe为半金属材料。

Studies on Phonon Spectra of Zinc - Blende Structure Semiconductors

闪锌矿结构半导体声子谱研究