wurtzite

First-principle Study of Electronic and Optical Properties of Wurtzite Structure GaN

纤锌矿GaN光电性质的第一性原理研究

XRD result indicates the crystal structures of ZnO wurtzite .

X射线衍射结果显示产物为ZnO纤锌矿结构。

The results of XRD show that the thin film has a wurtzite structure .

结果表明：沉积电位对薄膜形貌有着显著的影响；多孔片晶ZnO为六方纤锌矿结构；

An Analytic Low Field Electron Mobility Model of Wurtzite GaN

纤锌矿GaN低场电子迁移率解析模型

Force Constants and Dynamic Matrix of the Wurtzite Type Crystals

纤锌矿类型晶体的力常数和动力学矩阵

The results show that it has a polycrystalline hexagonal wurtzite structure .

结果表明：ZAO薄膜的结构为标准的ZnO纤锌矿相，没有Al2O3相出现；

XRD analysis showed the formation of pure wurtzite crystalline phase of zinc oxide .

XRD分析表明样品均为纯相纤锌矿结构的ZnO。

Growth of ZnO ( Wurtzite ) Whiskers Using the Floating Zone Method at High Oxygen Pressure

利用浮区法在高氧压下生长ZnO晶须

Carrier Transport in Wurtzite GaN Using Monte Carlo Method

纤锌矿GaN载流子输运的蒙特卡罗模拟

X-ray diffraction spectra showed that the sample is hexagonal wurtzite ZnO structure .

X射线衍射谱表明样品为六角纤锌矿结构的ZnO晶体。

It was found that ZnO thin films of the wurtzite structure were prepared by this method .

研究发现，该方法可以在玻璃衬底上成功制备具有纤锌矿结构的ZnO薄膜。

Phase Transition , Elastic Property and Electronic Structure of Wurtzite and Rocksalt ZnO

纤锌矿和岩盐结构ZnO的相变、弹性性质和电子结构研究

First-principles study of the crystal structures and electronic properties of S doped wurtzite ZnO

S掺杂纤锌矿ZnO晶体结构及电子性质的第一性原理研究

First-principle Calculation of Electronic Structure of Wurtzite ZnO Crystal

纤锌矿型氧化锌电子结构的第一性原理计算

The reduced behavior of the QC modes in wurtzite quantum systems is clearly observed .

观察到纤锌矿量子体系中的QC光学声子模的退化行为。

XRD analysis demonstrates that the nanocrystalline ZnO thin film has phase purity and wurtzite structure .

XRD分析显示纳米ZnO薄膜纯度高，呈纤锌矿结构。

The results indicated that the sample with dispersed structure and good dispersion was wurtzite structure ZnO nanoparticle .

结果表明，样品组成为六方相纤锌矿结构ZnO，由结构疏散、分散性较好、团聚较小的小颗粒组成。

The results show that all the samples are wurtzite structural and have c-axis preferred growth orientation .

分析结果表明：不同掺杂浓度的样品都为纤锌矿结构，且其衍射峰都具有明显的c轴取向。

The result of the XRD indicated that the production structure was wurtzite , which was mixed with hydrocarbon .

射线衍射结果表明，掺入了碳氢化合物的反应产物的晶须属六方纤锌矿结构。

All the films have the single-phase wurtzite structure with c-axis preferred orientation .

薄膜均具有单相、c轴取向的六角纤锌矿结构。

The results indicated that GaN particles in wurtzite structure were obtained at the Ga source temperature of 850 ℃ .

结果表明：当Ga源温度为850℃时得到六方纤锌矿结构的GaN晶体颗粒。

AlN is an important ⅲ-ⅴ compound semiconductor material with wide band-gap , which has wurtzite structure too .

氮化铝（AlN）是一类重要的宽带隙Ⅲ－Ⅴ族化合物半导体材料，其晶体结构为纤锌矿型，同ZnO的晶体结构相同。

The XRD results indicated that the ZnO nanoparticles were the hexagonal wurtzite crystallites .

XRD结果表明，ZnO粒子为六角晶系纤锌矿晶型。

Impurity States in Wurtzite Nitride Semiconductor Ellipsoidal Quantum Dots

纤锌矿氮化物半导体椭球形量子点杂质态

Studies on the Determination of the Particle 's Final States in Simulation of Wurtzite GaN by Full Band Monte Carlo Method

MonteCarlo模拟纤锌矿GaN材料中粒子最终态的确定

The nanorods have wurtzite structure without electrical field assistance and are primarily of zincite structure under electrical field .

无电场时制得的ZnO纳米棒属纤锌矿结构，而在电场下制得的主要是红锌矿结构。

ZnO is a wide direct-gap semiconductor with a hexagonal crystal structure of wurtzite .

ZnO是一种具有纤锌矿晶体结构的直接宽带隙半导体材料。

Quasi-confined Optical Phonon Modes in Wurtzite GaN / AlN Quantum Wells

GaN/AlN量子阱中的准受限声子

The X-ray diffraction ( XRD ) patterns show that ZAO thin films has a hexagonal wurtzite structure .

在氮气气氛下进行退火处理，X射线衍射（XRD）谱表明ZAO薄膜具有六角纤锌矿的晶体结构。

Results show that the AZO thin films have polycrystalline hexagonal wurtzite structure with highly c-axis preferred orientation .

结果表明，实验制备的柔性AZO薄膜为六角纤锌矿结构，且具有良好的c轴择优取向。