tddb

Experimental analysis and physical model investigation of TDDB of thin gate oxide

薄栅氧化层经时击穿的实验分析及物理模型研究

The Difference of TDDB under Constant Voltage Stress and Pulse Voltage Stress

脉冲和直流应力下栅氧化膜击穿特性的差别

Voltage Ramp TDDB Test and Research of the Parameters of Breakdown

薄栅氧化层斜坡电压TDDB击穿参数的研究

Study on parameter characterization of thin gate oxide TDDB breakdown

薄栅氧化层经时击穿的参数表征研究

The effect of polarity of the applied voltage on TDDB was investigated .

观察了所加电压极性对TDDB的影响。

Lifetime Assessment of Thin Gate Oxides by Voltage Ramp TDDB Test

薄栅氧化层斜坡电压TDDB寿命评价

Substrate Hot Hole Coupled TDDB Effects of Thin Gate

衬底热空穴耦合的薄栅TDDB效应

TDDB Test and Parameter Extraction of Gate Oxide

栅氧化层TDDB可靠性评价试验及模型参数提取

Study on substrate HOT-HOLE-INDUCED physical model of TDDB in thin gate dielectric

衬底热空穴导致的薄栅介质经时击穿的物理模型研究

SUPER - THIN LAYER ELECTROFOCUSING Research on TDDB of thin gate oxide

超薄平板等电聚焦电泳薄栅氧化层的TDDB研究

Lifetime Modeling and Characteristics of TDDB in VLSI Copper Interconnection

VLSI铜互连可靠性TDDB特性及其寿命评估模型研究

Research on TDDB of thin gate oxide

薄栅氧化层的TDDB研究

A method for fast gate oxide TDDB lifetime prediction for process control monitors ( PCM ) is proposed .

提出了一种快速推算栅极氧化膜TDDB寿命的新方法.该方法可以用于对工艺的实时监控。

TDDB Effect for Thin Gate Dielectric

薄栅介质TDDB效应

This paper discusses the difference of TDDB ( Time Dependence Dielectric Break down ) under constant voltage and pulse voltage stress .

本文讨论了在直流电压应力和脉冲电压应力作用下栅氧化膜击穿寿命的差别，脉冲应力下栅氧化膜击穿寿命大于直流电压下的击穿。

Hot-carrier enhanced TDDB effect of ultra-thin gate oxide is investigated by using substrate hot-carrier injection technique .

本文通过衬底热载流子注入技术，研究了热载流子增强的超薄栅氧化层TDDB效应。

Then we use these three lifetimes to project the TDDB lifetime at operation voltage and temperature via the E-model .

然后使用一定模型（E模型或者1/E模型）和这个三个寿命推算出氧化膜在器件使用温度下的寿命。

This dissertation is the first report that points out the cooperation of hot electron and hole is essential for the TDDB of ultra-thin gate oxides .

首次提出了超薄栅氧化层的经时击穿是由热电子和空穴共同作用导致的新观点。

On the other hand , TDDB experiments of copper interconnection have been taken to prove the performance improvement of interconnect by the use of low-k dielectric .

文中还谈到了新设计方法即插入中继缓冲和可变间隙设计对延时的影响。试验方面则进行了铜互连线的TDDB试验，来验证低k介质对互连性能的改善。

The electrical characters of interconnect lines with different line space and width are simulated with the ISE . The TDDB failure tests are operated on interconnect samples .

同时，我们对不同线间距以及不同线宽的互连线结构的电特性进行仿真，并且进行相应的TDDB失效测试。

TDDB evaluation experiments are implemented on the thin gate oxides MOS capacitor , and a method of precise measurement and characterization the trap density and accumulative failure are presented .

采用恒定电流应力对薄栅氧化层MOS电容进行了TDDB评价实验，提出了精确测量和表征陷阱密度及累积失效率的方法。

TDDB evaluation experiments were implemented on the 90 nm NMOS devices under constant voltage stress . The breakdown mechanism of TDDB was studied , and the lifetime of the devices was analyzed and predicted .

采用恒定电压应力对90nmNMOS器件进行了TDDB击穿的评价实验，深入研究了90nm情况下TDDB的击穿机理，并对器件寿命进行预测和分析。

TDDB evaluation experiments are carried out with constant current stress on MOS capacitors with ultra-thin gate oxides , and a method of precise measurement and characterization of the trap density and accumulative failure is presented .

采用恒定电流应力对超薄栅氧化层MOS电容进行了TDDB评价实验，提出了精确测量和表征陷阱密度超薄栅氧化层经时击穿效应与可靠性仿真技术研究和累积失效率的方法。

According to the results of the ramped voltage-accelerated testing with different ramped rates , the lifetime of silicon nitride capacitor at a normal working voltage was finally predicted based on the TDDB linear field model .

根据TDDB线性电场模型，采用不同斜率的斜坡电压应力测试数据预测了正常工作电压下的Si3N4寿命。

Experiment results show that breakdown characteristics , stress induced leakage current ( SILC ) characteristics and time dependent breakdown ( TDDB ) properties of N / O stack dielectric are better than those of pure oxide dielectrics .

实验结果表明相对于纯氧栅介质而言，N/O叠层栅介质具有更好的抗击穿特性，应力诱生漏电特性以及TDDB特性。

In this paper , sev-eral main breakdown models of TDDB are introduced . Then SBD ( soft breakdown ) and HBD ( hard breakdown ) are compared . Finally the relationship between TDDB and field , temperature and gate oxide thickness are illuminated .

本文重点介绍了TDDB的几种主要击穿模型和机理，比较了软击穿和硬击穿过程的联系与区别，并初步分析了TDDB与测试电场、温度以及氧化层厚度的关系。