sqw

Al - free SQW High - power Semiconductor Lasers

基于无铝单量子阱的大功率半导体激光器

Bistability of a SQW Semiconductor Laser with an Output-feedback Loss-modulation Scheme

单量子阱半导体激光器在输出反馈损耗调制方式下的双稳特性

The results show that the SQW LD has good temperature property and wide modulation bandwidth .

结果表明它具有较好的温度特性和较大调制带宽。

Based on ALD to Investigate the Regulating Mechanisms to Endocrine System of SQW

缩泉丸对醛固酮合成与分泌的调控机制研究

Study on Optical Characteristics of InGaAsP / GaAs SQW Lasers

InGaAsP/GaAs单量子阱半导体激光器光学特性的研究

High-power SQW Remote Junction Semiconductor Lasers The basic rules of laser including : Chinese Knot

大功率量子阱远结半导体激光器

High Power GaAs / GaAlAs SQW Laser Diode

大功率GaAs/GaAlAs单量子阱激光器

GaAs / AlGaAs Single Quantum Well ( SQW ) Bistable Laser with CCTS Structure

CCTS结构GaAs/AlGaAs单量子阱双稳态激光器

Based on the Collagen Protein and Neuroreceptor of Detrusor to Investigate Mechanisms of SQW

基于逼尿肌胶原蛋白及神经受体探讨缩泉丸作用机制

High power GaAs / GaAlAs single quantum well ( SQW ) LD have been fabricated on φ 40mm GaAs substrate grown by MOCVD .

采用MOCVD技术在φ40mmGaAs衬底上研制成大功率GaAs/GaAlAs单量子阱激光器。

This paper presents some new results obtained recently in the study of single quantum well ( SQW ), seperate confinement structure ( SCH ) InGaAsP / GaAs lasers .

介绍了单量子阱（SQW）分别限制异质结构（SCH）的InGaAsP/GaAs半导体激光器所得到的最新成果。

The epitaxial structure for LD is an optimized SQW GRIN SCH structure , and cm bars are made with a fill factor of 60 % .

激光器的生长结构采用经过优化的单量子阱渐变折射率分别限制波导结构，激光器芯片结构为标准的CM条，注入因子设计为60%。

Using a CCTS GaAs / AlGaAs SQW semiconductor laser , we have observed the bistability arising from output feedback loss modulation in the semiconductor laser .

利用双区共腔GaAs／AlGaAs单量子阱半导体激光器，观测到半导体激光器在输出反馈损耗调制方式下的光双稳特性。

The influences of the property parameters of the optical amplifier with T / C SQW on the output efficiency , 3 dB bandwidth , and the frequency shift were mainly discussed .

讨论了T/CSQW光放大器的特征参数对输出效率、输出带宽及频移的影响。

ZnO / Mg_ ( 0.12 ) Zn_ ( 0.88 ) O single quantum well ( SQW ) with different well width were grown by P-MBE .

制备了具有不同阱宽的Mg（0.12）Zn（0.88）O／ZnO单量子阱结构。

Single - quantum - well GaAs / AlGaAs laser with graded - index separate confinement heterostructure ( GRIN - SCH - SQW ) were fabricated by molecular beam epitaxy .

本文介绍了用分子束外延法制作的梯度折射率分别限制式单量子阱GaAs/AlGaAs半导体激光器。

Second , SQW has a marked inhibitory effect on B16 melanoma , average inhibitory rates of SQW in high dose group and low dose group were 23.26 % and 41.95 % ( p0.05 ) respectively .

第二，髓清丸对黑色素瘤B16具有明显的抑制作用，髓清丸的平均抑瘤率在高、低剂量组中分别为23.26%和41.95%（p0.05）。

LP-MOVPE Grown Broad-Waveguide Al-Free Active-Region SQW Lasers

LP-MOVPE生长宽波导有源区无铝单量子阱激光器

The Setting groups were as follows : young rats were regarded as normal control group and natural aging rats were divided into model control group , Jinkui Sheni Pill , SQW low dose group , SQW middle dose group and SQW high dose group on average .

设置组别：青年大鼠为正常对照组，14只，自然衰老大鼠分为模型对照组、金匮肾气丸组、缩泉丸低、中、高剂量组，14只/组。