sinx

The results above indicate that SiNx : H thin film has excellent surface-and bulk-passivation effect on crystalline silicon solar cells .

实验结果表明：氮化硅薄膜不仅具有表面钝化作用，也有良好的体钝化作用。

It suggest that SiNx films deposited at low tempera - ture can be applied in Organic Light Emitting Devices ( OLED ) packaging effectively .

实验结果表明低温氮化硅薄膜可以有效地应用于有机发光器件（OLED）的封装。

Passivation effect of sinx : h film on crystalline silicon materials and solar cells

氮化硅薄膜对晶体硅材料和电池的钝化效果研究

Characterization of SiNx Film Based on SiH_4-NH_3-N_2 System Prepared by LPCVD

SiH4-NH3-N2体系LPCVD氮化硅薄膜的研究

As supporting , low stress SiNx membrane with nanometer silicon embedded structure is fabricated through optimizing technologies .

通过优化工艺，制作出具有纳米硅镶嵌结构的低应力SiNx薄膜作为支撑；

Based on the characteristics of normal distribution function , this paper takes use of the sinx function to approach instead of the original quadratic function .

本文根据正态分布函数的特性，将原文中用二次函数逼近的方法，改用sinx函数去逼近。

Then a silicone / SiNx dual-layer structure with a good smooth surface was obtained by process optimization of the SiNx deposition on silicone surface .

通过对在硅酮表面沉积氮化硅工艺的优化，得到了外观平整性能优良的硅酮／氮化硅双层防潮膜结构。

The SiNx film deposited by PECVD has been widely used in mass production of solar cells because of its good-antireflection and low-cost .

PECVD沉积的SiNx膜具有优良的减反射作用和成本低等优点，这使其在太阳电池的大规模生产中得到了广泛的应用。

Visible Photoluminescence has been observed in crystallized a - Si : H / a - SiNx : H multilayer structures at room temperature .

在晶化的α-Si：H/α-SiNx：H多层膜结构中，当α-Si：H子层厚度Ls≤40A时，我们首次观察到室温下可见光致发光现象。

A simple method for the analysis of concentration ratios N / Si and O / Si in SiNx / Si and SiOx / Si is presented .

本文报道了一种分析硅衬底上SiNx和SiOx的N/Si和O/Si含量比的简便方法。

Studied the compactness of SiNx film , Hydrogen content and solar cell performance in different conditions by stripping film , fourier transform infrared spectroscopy and ⅰ - ⅴ testing .

采用去膜实验、傅里叶变换红外吸收和Ⅰ-Ⅴ测试分别对不同条件沉积氮化硅薄膜的致密性、氢含量和电池性能进行研究。

The hydrogen contained in SiNx thin film can enhance the carrier mobility of monocrystalline silicon , but after annealing at high temperature the mobility turns down .

氨化硅薄膜中的氢对单晶硅的载流子迁移率提高有一定作用，但经过高温处理后这种作用消失；

With the increment of substrate temperature , the density , refractive index and Si / N ratio of SiNx film increase , but deposition rate and H content decrease .

实验发现随着基板温度的增加，氮化硅薄膜的密度、折射率和Si/N比相应增加，而沉积速率和H含量相应减少；

Delamination and crack in TQFP and the effect of PECVD SiNx thin films on moisture-resistance properties of TQFP

TQFP器件的分层开裂和PECVDSiNx薄膜对TQFP器件防水性能的影响

The Moho depth calculated by inversing the gravity data of South China Sea region by means of matrix and 2-D sinx / x methods conforms better with actual data .

对南海海洋重力资料运用矩阵法和二度的sinx/x法进行反演，所获得的莫霍界面深度比较合乎实际情况。

By using isotropic characteristics of CDE , the article mainly studies the influence of different O2 / CF4 ratio on etching rate of Mo , SiNx and photo resist .

利用化学干法刻蚀各向同性的特点，本文主要研究化学干法刻蚀中不同的O2/CF4比例对Mo、SiNx和光刻胶刻蚀速率的影响。

PECVD SiNx films with good moisture-resistant ability , step coverage , uniformity on large area , stability under high humidity environment and thermal shock were deposited by optimization of deposition parameters .

通过对氮化硅沉积参数的优化，得到了防潮性能优良、台阶覆盖一致、大面积沉积均匀和在水汽及热冲击下稳定性良好的氮化硅薄膜；

It proves that the poly-silicon surface passivation is related to the compactness of SiNx film , and the body passivation is mainly relate to the Hydrogen content of SiNx . 5 .

研究表明，多晶硅的表面钝化主要与氮化硅薄膜的致密性有关，而体钝化则主要与氮化硅中的氢含量有关。

The results suggest that the SiNx as the diffusion source is conducive to the diffusion of Si into the AlN films , and the Si thermal diffusion can significantly improve the electrical properties of AlN films .

研究表明：SiNx作为Si的扩散源有利于促进Si向AlN薄膜中的扩散，能够显著的改善AlN薄膜的电学性质。

Both hydrogen plasma and SiNx thin film can effectively enhance the short circuit current density of mono and poly silicon solar cells , which cause the improvement of the absolute transfer efficiency about 0.5 % ~ 2.9 % .

氢等离子体和氮化硅薄膜都能有效地提高单晶和多晶电池的短路电流密度，进而使电池效率有不同程度（绝对转换效率0.5%2.9%）的提高；

The nc-Si / SiNx superlattice films was prepared by radio-frequency ( RF ) magnetron sputtering technique and thermal annealing . The films has been tested microstructure , optical band gap and nonlinear absorption coefficient .

采用射频磁控反应溅射和热退火方法制备纳米Si/SiNx超晶格薄膜，测定薄膜的微观结构、光学带隙和非线性吸收系数。

We have deposited SiNx films in Twinned Microware Electron Cyclotron Resonance ( MW-ECR ) Plasma Enhanced Unbalance Magnetron Sputtering ( PEUMS ), and studied the structure and properties of films .

本文采用微波ECR等离子体增强非平衡磁控反应溅射法制备了SiNX薄膜，系统的研究了SiNX薄膜的结构和性能。

The electric mobility is improved by H treating the interface of a-Si / SiNx . The characteristics and deposit parameters of these films is in keep with the request that of improving the response time of a-Si TFT-LCD .

这些功能膜的性能和制备条件参数满足提高a-SiTFT-LCD器件响应速度的要求。

The main research work of this dissertation is about the effect of high temperature annealing treatments on photoluminescence of silicon quantum dot and the variation characteristics in chemical component and bonding configuration of silicon nitride thin films ( SiNx films ) .

主要研究高温退火处理对硅量子点光致发光特性的影响和高温退火处理下含硅量子点氮化硅薄膜化学组成及键合结构变化特性。

The design and fabrication of one-layer bimaterial micro-cantilever array made of silicon nitride ( SiNx ) and gold ( Au ) without Si substrate for uncooled optical readout infrared ( IR ) imaging system were presented .

给出了一种用于非制冷光学读出红外探测器的核心器件&双材料微悬臂梁阵列的设计和制作。

The AlN films grown by low pressure metal organic vapor phase epitaxy are doped by Si thermal diffusion using Si and SiNx films as diffusion source , and the roles of Si doping on the electrical properties of AlN films .

采用SiNx和Si为扩散源，对低压金属有机气相外延生长的AlN薄膜进行了Si热扩散掺杂，研究了Si掺杂对AlN薄膜电学性质的影响。

In first part , in order to optimize the antireflection effect of the double-layer film , reflection spectra of the SiNx / SiO2 double-layer film was calculated by Matlab program and the optimal parameters of the film series were obtained theoretically .

在模拟部分中，为优化SiO2/SiNx双层膜的减反射作用，本文首先采用Matlab程序计算SiO2/SiNx双层膜的反射谱，从理论上获得最优的膜系组合。

By measuring the passivation results of hydrogen plasma and SiNx thin film , we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment , although it has little to do with the annealing temperature and time .

通过测试氢等离子体钝化和氮化硅薄膜钝化的效果，实验还发现氢等离子体处理对多晶硅材料的少子寿命提高作用比较明显，但是这种提高作用与处理温度以及时间的关系不大；

However , SiNx film has a bad interface with Si and the density of SiNx film is low , so a large number of H will get away during firing step , which results in high interface state density and low minority carrier lifetime .

然而SiNx/Si界面性质和SiNx膜致密度比较差，在烧结过程中会有大量的H溢出，导致界面态密度很高且有效少子寿命降低。

Though SiO2 gate insulator α - Si : HFET is a typical ambipolar device , the Si02 / α - SiNx : H gate insulator α - Si : H FET has no bipolarity .

SiO2栅介质α-Si：HFET具有典型的双极性，但是SiO2/α-SiNx：H栅介质α-Si：HFET则不是双极性的。