sih4

The effects of gas volume ratio of N2 / SiH4 and substrate temperature on crystallization and composition of films were reported .

本工作研究了N＿2／SiH＿4比和衬底温度对SiN薄膜的晶化和组分的影响。

A similar Isotope effect is also observed in discharges with different filling gases [ He + H2 + SiH4 or H2 ] .

在不同的充入气体[He+H2+SiH4和H2]放电中，观察到类同位素效应。

The microstructure of silicon thin films fabricated at low temperature by plasma enhanced chemical vapor deposition ( PECVD ) using H2 / SiH4 has been studied by Raman scattering .

用Raman散射谱研究了以SiH4/H2为气源，用等离子体增强化学气相沉积技术，低温制备的一系列硅薄膜的微结构特征。

The dissertation mainly focuses on variation of the structure of a-Si : H as functions of the dilution ratio of H2 / SiH4 , substrate temperature and substrate position at low microwave power .

在低微波功率下，本论文着重研究了H2／SiH4稀释比、衬底温度和衬底位置对a-Si：H薄膜结构的影响。

Silicon nitride ( SiN ) thin films were deposited by PECVD ( Plasma Enhanced Chemical Vapour Deposition ) of silane ( SiH4 ) and ammonia ( NH3 ) reactants .

利用等离子增强化学气相沉积（PECVD）方法沉积了氮化硅薄膜，反应气体为氨气和硅烷。

We experimented by varying the dilution ratio of H2 / SiH4 at different substrate position , and found that the optimum dilution ratio of H2 / SiH4 of system depends on substrate position .

在不同的衬底位置，我们进行了H2／SiH4稀释比影响a-Si：H薄膜结构的实验，发现系统最佳H2／SiH4稀释比依赖于衬底位置的变化而变化。

( SiH4 ) ratio being 20 , when the flow rate of the mixed gas is lower than and higher than 720 ml / min , the major factor controlling film formation is the gas diffusion process and surface gas reaction , respectively ;

当混合气体流量大于720ml/min时，则主要受表面气相反应过程控制；

In other words , in a binary blend of SiH4 and NF3 , concentrations of silane greater than or equal to0.66 % and less than or equal to95.3 % , form an explosive mixture .

换句话说，在硅烷和NF3的二元混合物中，硅烷的浓度大于或等于0.66%和小于或等于95.3%，都会形成爆炸性混合物。

Based on one-dimensional self-consistent fluid model , the characteristics of the mixed gas ( Ar / SiH4 / H2 ) plasma glow discharge are studied with different high-frequency ( 6.78 MHz , 13.56 MHz and 27.12 MHz ) under atmospheric pressures .

基于一维自洽流体力学模型，对大气压不同高频（6.78MHz、13.56MHz和27.12MHz）激发下，Ar/SiH4/H2等离子体辉光放电特性进行研究。

It is observed that the resistivity of P-doped a-Si ∶ H thin films decreases both with the enhancement of PH3 / SiH4 ratio and with the rise of gas temperature , but increases with the advance of annealing temperature afterwards .

结果表明，掺磷a-Si∶H薄膜的电阻率随磷掺杂比（PH3/SiH4）的增大和气体温度的升高而降低，但随退火温度的升高而增大；

The hydrogenated amorphous silicon nitride ( a-SiNx ∶ H ) thin films were produced in a radio-frequency plasma-enhance chemical vapor deposition ( rf-PECVD ) system using NH3 / SiH4 / N2 mixture source gases at 330 ℃ .

采用等离子增强型化学气相沉积法（RF-PECVD），源气体为NH3/SiH4/N2的混合气体，在330℃的温度下沉积a-SiNx∶H薄膜。