porous Si

A New Physical Model for Strong Visible Luminescence of Porous Si

多孔硅发强可见光的新物理模型

Experiment study of relation between porous Si luminescence and quantum size effect

多孔硅发光与量子尺寸效应的实验研究

Influence of Ion Irradiation on Properties of Porous Si

离子辐照对多孔硅性质的影响

Comparative study of porous Si and Si oxide with blue light emitting

发射蓝光的氧化多孔硅和氧化硅的比较研究

In this thesis , the formation and surface mechanic , characteristic of porous Si film is discussed .

本文介绍了从纳米多孔硅到大孔多孔硅厚膜的成膜机制，表面机理，和结构特性。

Luminescence Spectra of C_ ( 60 ) Molecules Embedded in Porous Si

嵌于多孔硅的C（60）的光致发光

Porous Si With Visible Light Emission

发可见光的多孔硅

Blue photoluminescence of anode etched nm porous Si formed by square impulses current

脉冲电阳极腐蚀纳米多孔硅的蓝光发射

Electroluminescent Property of n Type Porous Si and Its Characterization by XPS and LIMA

n型多孔硅的电发光性能及其XPS和LIMA表征

Growth and characterization of polycrystal SiC films on porous Si substrates via APCVD process

多晶SiC/多孔硅结构材料的APCVD生长及表征

The luminescence quenching effect of porous Si caused by adsorbing organic moleculars are investigated .

研究了多孔硅（PS）吸附有机溶剂分子后对多孔硅荧光谱的淬灭效应。

Preparation and properties of 2D fused-silica fiber reinforced porous Si _3N_4-SiO_2 matrix composites

二维石英纤维增强多孔Si3N4-SiO2基复合材料的制备及其力学性能

Over the past several decade , most of efforts were concentrated on the formation and mechanism of porous Si .

在过去的几十年里，大多数的工作集中于多孔Si的制备及机理研究。

The optoelectronic integration of porous Si light-emitting diodes into a microelectronic circuit has been realized .

多孔硅是硅基发光材料的一个重大突破，并实现了多孔硅发光二极管与集成电路的集成。

A new kind of high quantum efficiency PtSi infrared detector , namely PtSi / Porous Si detector , is introduced .

采用多孔PtSi结构是提高PtSi探测器量子效率的有效技术途径。介绍了一种高量子效率的PtSi红外探测器，即多孔PtSi红外探测器。

To improve the optical confinement of light in the active part of the cell , a buried porous Si reflector is developed .

为了提高电池活跃区域的光的光学局限，特别研发了多孔硅反射镜。

Most of theoretical researches studied the quantum confinement effect on the luminescence of porous Si and Si nanocrystallites .

大部分理论计算研究的是量子限制对多孔硅和纳米硅晶发光的效应。

Microstructure and Photoluminescent Spectrums of Porous Si

多孔硅的微结构与光致发光谱

Compared with conventional fabrication based on corrosion of monocrystalline Si wafer , this method is inexpensive and can realize controlled fabrication of porous Si .

与传统的单晶Si片腐蚀制备相比较，这种方法成本低廉，可实现多孔Si的可控制备。

The calculated radiative lifetime is much longer than that of excitons in the direct-gap GaAs , suggesting that the quantum confinement effect cannot completely explain the high radiative efficiency of porous Si .

计算得到的辐射寿命比直接能隙GaAs中激子的长得多，说明量子限制不能完全解释多孔硅的高发光效率。

The optical and electrical properties of ZnO / porous Si ( PS ) heterostructure are studied . The PS sample is formed by the anodization of a single-crystal Si wafer . ZnO films are then deposited on the PS substrate by pulsed laser deposition .

用脉冲激光沉积的方法在多孔硅（PS）衬底上沉积ZnO薄膜，在室温下测量了ZnO/PS异质结的结构及光学和电学性质。

The results show that the structure of inorganic zinc silicate coatings was porous microstructure with Si O Zn polymer bond among zinc powders and chemical bond between the coatings and steel substrate ;

结果表明，无机硅酸锌涂层的结构为：Zn粉颗粒间以SiOZn聚合物网络键合，涂层与底材钢基体间是以化学键结合的微观多孔的涂层结构；

The formation mechanism of porous InP with different structure is discussed combining surface curvature model for porous Si with surface state , and characteristics of InP wafers . 3 .

同时，结合表面弯曲模型和表面态分析了不同形貌的多孔结构的形成机理。