pmos

Integrated data management platform and its application to PMOS

集中数据管理平台及其在电力市场中的应用

A method is discussed to improve stability of PMOS dosimeters .

讨论了在PMOS剂量计中提高稳定性的办法。

Self-adjust Input Output Low Power White LED Drive Circuit base on PMOS

基于PMOS自适应输入输出低压白光LED驱动

Some PMOs , however , do coordinate and manage related projects .

但是，有些项目管理办公室的确协调和管理互相联系的项目。

Application of the PMOS dosimeter on satellite for total dose monitor

PMOS总剂量监测技术的卫星应用

Preparation and Performance of PMOS / Inorganic Powder Composites

PMOS/无机粉体复合材料的制备与性能研究

Simulation and Analysis of 6H-SiC PMOS with Temperature Compensation

带温度补偿的6H-SiCPMOS模拟与分析

Influence of Irradiation Bias Field on Response of PMOS Dosimeters

偏置对PMOS剂量计辐照响应的影响

Silicon grid PMOS type integrated circuit

硅栅pmos集成电路

Calculation of RC parameters of PMOS ring oscillator

关于PMOS积分型环形振荡器RC参数的计算公式

Circuit Architecture of E / D PMOS IC

E/DPMOS中的几种电路结构介绍

Research on Radioactive Sensitive PMOS Device

辐射敏感PMOS管的研制具有判断功能漏电保护器的研究

The Effect on Threshold Voltage of PMOS Caused by BF_2 ~ + Implantation

BF2~+注入对PMOS晶体管开启电压的影响

Temperature effect of pMOS dosimeters and its compensation

pMOS剂量计的温度效应及其补偿探讨

PMOS design for VLSI CMOS by a C-V technique

超大规模集成CMOS中PMOS设计的C&V技术

Based on the PMOS bulk-driven technique , an ultra-low voltage operational amplifier is proposed .

基于PMOS衬底驱动技术，设计实现了超低压运算放大器。

The characterization in space-charge region of SiC PMOS structure is analyzed by solving one dimension poisson equation .

用解一维poisson方程的方法分析了SiCPMOS空间电荷区的电特性；

In order to improve efficiency , the PMOS transistor is adopted to achieve the ultra low dropout voltage .

采用具有低漏失特性的PMOS管作为调整元件，提高了芯片的整体效率；

An analytical model which could be used to study the 6H-SiC PMOS device behavior in a wide temperature range has been developed .

提出了一个在较宽温度范围内能精确描述6H-SiCPMOS性能的器件模型。

Dose rate effects of PMOS dosimeter

PMOS剂量计的剂量率效应

K · p and Monte Carlo Studies of Hole Mobility in Strained-Si pMOS Inversion Layers

应变硅pMOS反型层中空穴迁移率k·p及蒙特卡罗模拟研究

Long-term anneal of PMOS dosimeter at room temperature

PMOS剂量计的长期室温退火

Based on the PMOS Quasi-floating gate transistors , a fully differential operational amplifier is proposed .

基于准浮栅PMOS晶体管，设计实现了全差分运算放大器。

E / D NMOS reference is adopted and a PMOS transistor is used as pass element in the design .

电路设计中，采用E/DNMOS基准，用PMOS管作调整管；

The important way for stress enhancement is use selective epitaxy silicon germanium replace silicon in PMOS source / drain area .

应力增强方法中最重要的就是在P型半导体的源/漏区用选择性外延生长的锗化硅代替传统的硅。

One new domino logic circuit whose architecture is based on full PMOS sleep transistors and a dual threshold voltage CMOS technology is introduced .

介绍一种全部由PMOS休眠管实现的双阈值电压多米诺逻辑电路。

The initial sign of governance in IT organizations was the formation of EA groups or project management offices ( PMOs ) .

在IT组织中组建EA小组或项目管理办公室（PMO），是将要使用治理的先兆。

The annealing behaviors of PMOS Dosimeters with various gate biases over a wide temperature range have been investigated .

研究了PMOS剂量计在不同温度和栅偏置下的辐照退火表现。

A low voltage bulk-driving PMOS cascode current mirror

一种基于衬底驱动PMOS晶体管的低压共源共栅电流镜

NMOS is used as current switch , which has faster speed compare with PMOS and has high current drive capability and gm.

NMOS管相对于PMOS管速度更快，有更高的电流驱动能力和高的跨导，在本设计中作为倒梯形R-2R电阻网络中各支路的电流开关。