mos

A Direct Display Method for Measuring MOS Interface State Density Distribution

MOS系统界面态密度分布的一种直接显示法

The Infrared Dynamic Image System Based on the MOS - resistance Arrays

基于MOS&电阻阵列的红外动态图像生成系统

MOS BEAUTY INTERNATIONAL was over many years the establishment .

巫师国际化妆品成立多年以来。

Power MOS devices need high quality of SiO2 insulating film .

在功率MOS器件中，作为绝缘层的SiO2质量相当关键。

Effect of Advanced Process on the Total Dose Irradiation of MOS Device

先进工艺对MOS器件总剂量辐射效应的影响

Experimental Extraction of Model Parameter for 3 μ m Process MOS Transistor

3μm工艺MOS管模型参量的实验提取

Abnormal phenomena analysis in measuring of high frequency MOS C-V characteristics

高频MOSC－V特性测量中异常现象分析

A New Pd - MOS Integrated Hydrogen Sensor and It 's Application

新型钯栅MOS型集成氢敏传感器及其应用

Study on high electric field annealing effect in thin gate oxide of MOS structure

MOS结构中薄栅氧化层高场退火效应的研究

An Integrated MOS Ring Oscillator Pressure Sensor with Silicon Box Structure

硅盒结构集成MOS环振式压力传感器

The Investigation of Total Dose Radiation Hardness Technique for MOS Devices

MOS器件总剂量辐射加固技术研究

A New Way for Improving MOS Forecast with the Latest Real Observational Data

利用最近资料改进MOS预报的方法

Radiation Effects of MOS Devices at Low Dose Rate

低剂量率下MOS器件的辐照效应

Negative Bias Temperature Instability in MOS Structures at Low Temperature

MOS结构低温负偏压温度不稳定性

The variable - frequency C-V method for measuring interface characteristics of MOS structure

MOS结构界面性质的变频C-V研究

Self heating of a MOS device will reduce performance .

MOS器件的自加热效应将影响器件的性能。

This Paper studies interface effect of avalanche hot electron in MOS structures .

本文研究了电子束蒸铝MOS结构的热电子雪崩注入的界面效应。

Measurement of total dose effects on MOS devices and circuits

MOS器件及电路的总剂量辐射效应测试技术

Therefore , the research of Power MOS and its reliability issue is of great significance .

因此，对功率MOS器件及其可靠性进行研究很有意义。

The Rise Time Model of MOS Charge Pump

MOS电荷泵上升时间模型的建立

Advanced Current Characteristics of MOS Field Effect Transistors

MOS场效应管的新的电流公式

Analysis and Experiment of MOS Power Device Termination

MOS型新型功率器件终端场分析与实验

The Three Phases High-voltage Power MOS Gate Drive Integrated Circuit

三相高压功率MOS栅驱动集成电路

Thus , the radiation response of MOS device can be significantly changed .

这样，已能有效地改变MOS器件的抗辐照性能。

Surface Oxidation and Electron Transfer of MoS 2 During Friction

MoS2摩擦表面氧化与电子转移

Noise Analysis and Low-Noise Design of MOS Analog Integrated Circuits

MOS模拟集成电路的噪声分析和低噪声设计

Analysis of the Performance Difference of MOS and Bipolar Amplifiers

MOS与双极型两级放大器的性能差异分析

Analytical Calculation of Quantum Effect in MOS Inversion Layer

MOS反型层量子化效应的解析计算

Influence of Si_3N_4 Film on Storage Time of MOS Capacitor

Si3N4膜对MOS电容器存储时间影响的研究

The Application of Composite Factors of Synoptic Dynamics to the MOS Precipitation Forecasting Method

天气动力学组合因子在MOS降水预报中的应用