lpe

Realization of Precise Thermal Field in LPE System

液相外延系统中高指标热场的实现

The Growth of a New Type Magneto Optic Garnet Film by LPE

新型磁光石榴石薄膜的液相外延生长

Growth of Double n - layer LPE GaP

双n层GaP液相外延生长

The morphology of dislocation pit of gap : n LPE semiconductor

GaP：NLPE半导体材料位错密度和位错坑形态分析

Study on the oxidative characterization of LPE HgCdTe film surface by XPS

液相外延碲镉汞薄膜表面氧化特性的光电子能谱研究

Influence of the impurity in LPE gap ∶ n on PL spectra

GaP：N液相外延层中杂质对PL谱的影响

Study of 1.35 μ m InGaAsP / InP Quantum Well Structure Grown by LPE

用LPE生长1.35μmInGaAsp/InP量子阱结构的研究

The devices are then grown by LPE technique .

然后由LPE技术获得这一器件。

The recombination current is the main part of the dark current of LPE GaAs solar cells .

复合电流是液相外延GaAs太阳电池暗电流的主要成分。

Dislocation density of gap ∶ n LPE wafer and its influence on brightness

GaP：NLPE片的位错对发光亮度的影响

The Growth of GaAlAs / GaAs DH LPE Layers at Low Temperature

GaAlAs/GaAs异质结构的低温LPE生长

Analysis of the Main Defects and Its ′ Origin on HgCdTe Film Grown by LPE

碲镉汞液相外延薄膜典型缺陷及其起源分析

A solvent for the material to be deposited is needed in LPE .

在LPE法中，需要有待淀积材料的溶剂。

In this paper , encapsulation reliability of LPE system and vacuum effects on wafers are reported .

本文介绍了液湘外延系统设备的密封可靠性与真空度对外延片质量的影响。

Junction Characteristics of MOCVD and LPE GaAs Solar Cells

MOCVDGaAs太阳电池的结特性

Carrier Concentration Profiles of GaP ∶ N LPE Wafers

GaP∶NLPE片的纵向载流子浓度分布

SEM Study on Ultra-thin Active Layer Struture of LPE Wafers

LPE生长外延片超薄有源层结构的SEM研究

Study of Recombination Centre Levels In N-Type LPE GaAs Layers Irradiated by Electrons

电子辐照N型LPE-GaAs层中复合中心能级的研究

It was found that the mismatch of crystal lattice played an important role in the process of LPE .

YBiIG、YbIG系列石榴石薄膜的生长、测试结果表明，晶格失配度对LPE外延成功与否起重要作用。

LPE Growth of the RE-Substituted YIG Magneto optical Single Crystal Films

稀土类掺杂YIG磁光单晶薄膜的LPE生长

Theory and experiments of gainasp / inp super lattice growth by very thin solution LPE

超薄溶液LPE技术生长GaInAsP／InP超晶格的理论与实验

GaAlAs / GaAs used for light source of night vision systems has been grown by modified LPE technology .

利用改进的液相外延技术生长出了GaAs／GaAlAs夜视系统用光源。

A Solubility Model for Bismuth - Doped Yttrium Iron Garnets Films by LPE Growth

液相外延生长Bi：YIG薄膜的溶性模型

Analysis on IR Transmission Spectrum at Room Temperature for Hg_ ( 1-x ) Cd_xTe LPE Layers

Hg（1-X）CdxTe液相外延层室温红外透射谱分析

By using single-step LPE and self-aligned processing technology , high reliability ridge waveguide lasers have been made .

用一次液相外延及自对准制管技术精心制作出了可靠性很高的脊形波导（RWG）激光器。

Diffuse length of few carrier running electron for determining GaP LPE sample flat by use of EBIC

利用EBIC测定GaPLPE样片的少子扩散长度

The preparation of LPE GaAs Materials for high-low junction IMPATT diodes

高-低结IMPATT二极管用LPEGaAs材料的研制

Residual acceptor impurities in high purity LPE and VPE GaAs

高纯度砷化镓外延薄膜剩余受主杂质的研究

The study of lattice match in gainasp / InP heterojunction LPE layers

GaInAsP/InP异质结液相外延层晶格匹配的研究

Effects of Substrate Misorientation on LPE Growth over Nonplanar Substrates

衬底定向偏差角对非平面衬底液相外延的影响