ldd
- 网络轻掺杂漏;激光二极管驱动器;设备驱动程序;轻掺杂漏极;掺杂漏极
![ldd](../cache/238815.jpg)
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A Study on LDD Structure for Improving Circuit Operating Voltage
LDD方法在提高电路工作电压中的应用研究
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One useful tool for debugging shared library problems is ldd .
ldd是调试共享程序库问题的一个实用工具。
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Surface lateral electric field for LDD MOSFET and its application
LDDMOSFET表面横向电场模型及其应用
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Deep Submicron LDD CMOS Integrated Numerical Model and Ring Oscillator Circuit Transient Simulation
深亚微米LDDCMOS集成数值模型及环振电路的瞬态模拟
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Design of Digital LDD Ladder High-Pass Filter with Low Sensitivity
低灵敏度数字LDD梯形高通滤波器的设计
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Simulation and Analysis of Ultra Deep Sub-Micron Asymmetrical Halo LDD Low Power Device
超深亚微米非对称HaloLDD低功耗新器件的研究分析
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The article analyses from LDD 's characteristics , it explains thought and theory of government economic behavior history .
本文从分析欠发达地区(国家)的特性入手,阐述了经济发展史中有关政府经济行为的思想、理论;
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The model LDD 210 H hydraulic tandem vibration roller
LDD210H全液压串联式振动压路机
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Investigation of the Lightly Doped Drain ( LDD ) MOSFET Technology
轻掺杂漏(LDD)MOSFET工艺研究
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Finally , the optimal characteristics of LDD structure are got , which are low doping and shallow junction .
最后,得出了LDD区的最佳结构特征应满足的条件是:轻掺杂、浅结;
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A Dry Etch Technology for SiO2 Sidewall in LDD and SST Device Structures
用于LDD和SST的SiO2边墙干法腐蚀工艺研究
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Gate Current Simulation of SOI LDD MOSFET
SOILDDMOSFET的栅电流的模拟
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Characteristics of degradation under GIDL stress in ultrathin gate oxide LDD nMOSFET 's
超薄栅下LDDnMOSFET器件GIDL应力下退化特性
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A Fully Depleted Short-Channel SOI LDD / LDS MOSFET Model for VLSI Circuits Analysis
适于器件及电路分析的全耗尽短沟道LDD/LDSSOIMOSFET器件模型
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Si0_2 Sidewall Spacer Technology and Its Application in LDD MOSFET
SiO2边墙技术及在LDDMOSFET中的应用
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[ Method ] Blood samples and MRI from 182 Han people were collected , including 81 patients with LDD and 101 healthy individuals .
[方法]收集182例汉族人静脉血标本和腰椎MRI,其中对照组101例,病例组81例。
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The appropriate LDD parameters which may depress the KINK effect are provided based on the simulated results of TCAD tools .
基于TCAD工具的计算结果,给出了合适的LDD参数,使KINK效应的影响降到最低。
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Numerical Simulation of LDD MOSFET
轻掺杂漏(LDD)MOSFET的数值模拟
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The behaviors of the GIDL stress in LDD NMOSFET are studied .
对LDDnMOSFET中的GIDL应力特性进行了研究。
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Conclusion : TCM treatment can relieve the clinical symptoms of LDD , but could not affect the structure of the degenerated lumbar disc .
治疗前后椎间盘厚度、MRI信号强度亦无明显差异。结论:中医综合治疗能缓解LDD患者的临床症状,但对退变腰椎间盘的形态不能产生明显影响。
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Threshold Voltage of Two-Dimensional Short-Channel SOI-MOSFET / LDD Devices
二维短沟道SOI&MOSFET/LDD结构的阈值电压
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The short channel effects , the structure of LDD and SOI , phaseshift mask and multilevel interconnection were included .
LDD和SOI结构;移相掩模光刻技术和多层金属布线工艺。
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Characterization and Modeling of LDD MOSFET _s
漏轻掺杂MOSFET的特性分析及其解析模型
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Based on the design fundamental of digital LDI ladder filter , a digital LDD ladder high-pass filter is designed by using the frequency transformation in this paper .
本文利用数字梯形滤波器的设计原理,以离散微分器作为积木块,利用频率变换方法,设计出数字LDD梯形高通滤波器。
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Don 't forget also to check the system man pages for individual functions like ld , ldd , ipcs , ipcrm and so on .
不要忘记去查看关于ld、ldd、ipcs、ipcrm等各个函数的系统手册页。
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For the purpose of reducing off-state current , lightly doped drain ( LDD ) structures were used in a p-Si TFT LCD .
针对多晶硅薄膜晶体管液晶显示器件关态漏电流较大的问题,采用源漏轻掺杂结构以降低关态时电荷的泄漏,增加晶体管的开关电流比值。
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The results indicated that LDD and Qiju Dihuang decoction can evidently increase the activities of SOD and GSH Px and apparently reduce LPO in the blood of young mice .
结果表明,六味地黄汤、杞菊地黄汤可明显增强小鼠血中SOD的活性和GSH-Px的活力,使LPO显著降低。
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Firstly , this dissertation introduces the concept , makeup and the characteristics of mobile computing , gives the concept of Location Dependent Data ( LDD ) and Location Dependent Query ( LDQ ) respectively .
本文首先介绍了移动计算的概念、组成和特点,对移动计算环境下的位置相关数据(LDD)和位置相关查询(LDQ)有关的概念进行了总结。
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The behaviors of low gate voltage ( LGV ) and peak substrate current ( Isub , max ) stresses are studied in ultra-short and ultra-thin LDD NMOSFET .
对超短超薄LDDnMOSFET中的低栅压(LGV)和最大衬底电流(Isub,max)应力特性进行了研究。
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The results of test show that the breakdown voltage of LDD MOSFET is higher than that of the conventional MOSFET over 3 volts and the short channel effects of the threshold voltage are restrained obviously .
测试结果表明,LDDMOSFET击穿电压高于常规MOSFET3V以上,同时阈值电压的短沟效应明显减小。