ldd

A Study on LDD Structure for Improving Circuit Operating Voltage

LDD方法在提高电路工作电压中的应用研究

One useful tool for debugging shared library problems is ldd .

ldd是调试共享程序库问题的一个实用工具。

Surface lateral electric field for LDD MOSFET and its application

LDDMOSFET表面横向电场模型及其应用

Deep Submicron LDD CMOS Integrated Numerical Model and Ring Oscillator Circuit Transient Simulation

深亚微米LDDCMOS集成数值模型及环振电路的瞬态模拟

Design of Digital LDD Ladder High-Pass Filter with Low Sensitivity

低灵敏度数字LDD梯形高通滤波器的设计

Simulation and Analysis of Ultra Deep Sub-Micron Asymmetrical Halo LDD Low Power Device

超深亚微米非对称HaloLDD低功耗新器件的研究分析

The article analyses from LDD 's characteristics , it explains thought and theory of government economic behavior history .

本文从分析欠发达地区（国家）的特性入手，阐述了经济发展史中有关政府经济行为的思想、理论；

The model LDD 210 H hydraulic tandem vibration roller

LDD210H全液压串联式振动压路机

Investigation of the Lightly Doped Drain ( LDD ) MOSFET Technology

轻掺杂漏（LDD）MOSFET工艺研究

Finally , the optimal characteristics of LDD structure are got , which are low doping and shallow junction .

最后，得出了LDD区的最佳结构特征应满足的条件是：轻掺杂、浅结；

A Dry Etch Technology for SiO2 Sidewall in LDD and SST Device Structures

用于LDD和SST的SiO2边墙干法腐蚀工艺研究

Gate Current Simulation of SOI LDD MOSFET

SOILDDMOSFET的栅电流的模拟

Characteristics of degradation under GIDL stress in ultrathin gate oxide LDD nMOSFET 's

超薄栅下LDDnMOSFET器件GIDL应力下退化特性

A Fully Depleted Short-Channel SOI LDD / LDS MOSFET Model for VLSI Circuits Analysis

适于器件及电路分析的全耗尽短沟道LDD／LDSSOIMOSFET器件模型

Si0_2 Sidewall Spacer Technology and Its Application in LDD MOSFET

SiO2边墙技术及在LDDMOSFET中的应用

[ Method ] Blood samples and MRI from 182 Han people were collected , including 81 patients with LDD and 101 healthy individuals .

[方法]收集182例汉族人静脉血标本和腰椎MRI，其中对照组101例，病例组81例。

The appropriate LDD parameters which may depress the KINK effect are provided based on the simulated results of TCAD tools .

基于TCAD工具的计算结果，给出了合适的LDD参数，使KINK效应的影响降到最低。

Numerical Simulation of LDD MOSFET

轻掺杂漏（LDD）MOSFET的数值模拟

The behaviors of the GIDL stress in LDD NMOSFET are studied .

对LDDnMOSFET中的GIDL应力特性进行了研究。

Conclusion : TCM treatment can relieve the clinical symptoms of LDD , but could not affect the structure of the degenerated lumbar disc .

治疗前后椎间盘厚度、MRI信号强度亦无明显差异。结论：中医综合治疗能缓解LDD患者的临床症状，但对退变腰椎间盘的形态不能产生明显影响。

Threshold Voltage of Two-Dimensional Short-Channel SOI-MOSFET / LDD Devices

二维短沟道SOI&MOSFET/LDD结构的阈值电压

The short channel effects , the structure of LDD and SOI , phaseshift mask and multilevel interconnection were included .

LDD和SOI结构；移相掩模光刻技术和多层金属布线工艺。

Characterization and Modeling of LDD MOSFET _s

漏轻掺杂MOSFET的特性分析及其解析模型

Based on the design fundamental of digital LDI ladder filter , a digital LDD ladder high-pass filter is designed by using the frequency transformation in this paper .

本文利用数字梯形滤波器的设计原理，以离散微分器作为积木块，利用频率变换方法，设计出数字LDD梯形高通滤波器。

Don 't forget also to check the system man pages for individual functions like ld , ldd , ipcs , ipcrm and so on .

不要忘记去查看关于ld、ldd、ipcs、ipcrm等各个函数的系统手册页。

For the purpose of reducing off-state current , lightly doped drain ( LDD ) structures were used in a p-Si TFT LCD .

针对多晶硅薄膜晶体管液晶显示器件关态漏电流较大的问题，采用源漏轻掺杂结构以降低关态时电荷的泄漏，增加晶体管的开关电流比值。

The results indicated that LDD and Qiju Dihuang decoction can evidently increase the activities of SOD and GSH Px and apparently reduce LPO in the blood of young mice .

结果表明，六味地黄汤、杞菊地黄汤可明显增强小鼠血中SOD的活性和GSH－Px的活力，使LPO显著降低。

Firstly , this dissertation introduces the concept , makeup and the characteristics of mobile computing , gives the concept of Location Dependent Data ( LDD ) and Location Dependent Query ( LDQ ) respectively .

本文首先介绍了移动计算的概念、组成和特点，对移动计算环境下的位置相关数据（LDD）和位置相关查询（LDQ）有关的概念进行了总结。

The behaviors of low gate voltage ( LGV ) and peak substrate current ( Isub , max ) stresses are studied in ultra-short and ultra-thin LDD NMOSFET .

对超短超薄LDDnMOSFET中的低栅压（LGV）和最大衬底电流（Isub，max）应力特性进行了研究。

The results of test show that the breakdown voltage of LDD MOSFET is higher than that of the conventional MOSFET over 3 volts and the short channel effects of the threshold voltage are restrained obviously .

测试结果表明，LDDMOSFET击穿电压高于常规MOSFET3V以上，同时阈值电压的短沟效应明显减小。