lattice defects

Distribution of Ni in Si is U-shaped . Precipitation of Ni and lattice defects were observed .

扫描电子显微镜观察到了Ni在Si表面的沉积和由此产生的晶格缺陷。

Many important physical properties of lithium niobate crystal strongly depend on the composition and lattice defects inside the crystal .

铌酸锂晶体的很多物理特征与其本身的组分和晶格缺陷有着密切的关系。

Among them , point defect is an important kind of lattice defects .

点缺陷是一类非常重要的晶体缺陷，它们的产生、运动与相互作用，以至于聚集或消失，都影响着金属晶体的基本性质。

The Formation of Lattice Defects during the Growth of Crystals

晶体生长中缺陷的形成

Further , various techniques for the direct observation of lattice defects are compared and discussed .

对于直接观测晶体缺陷的各种实验技术进行了对比和讨论。

Progress in the studies of lattice defects

晶体缺陷研究的进展

Evolution And Colouration of Lattice Defects in Diamonds at High Pressure and High Temperature

高压高温处理条件下钻石中晶格缺陷的演化与呈色

Study on Lattice Defects in Plasma-nitrided Layer By Rare-earth Catalytic Penetration

稀土催渗离子渗氮层中晶体缺陷的研究

Conditioning of the distortional energy in crystals to the formation of lattice defects

晶体畸变能对晶体缺陷形成的制约

The lattice defects in the plasma - nitrided layer have been studied by TEM .

用透射电镜研究了稀土催渗离子渗氮层中的晶体缺陷。

Study of the lattice defects in NiAl by positron annihilation

用正电子湮没研究NiAl中的晶体缺陷

Lattice Defects in the Heteroepitaxial Layer of Compound Semiconductors

化合物半导体异质外延层中的缺陷

Lattice defects in α - si_3n_4 studied by HREM

高分辨电子显微镜研究α-Si3N4晶格缺陷

Lattice defects in AIN ceramics

A1N陶瓷中的晶格缺陷

Lattice defects in solid helium

固体氦中的晶格缺陷

The analysis indicates that cold plastic deformation results in crystal lattice defects , which facilitates the absorption and diffusion of boron atoms .

分析认为，冷塑性变形可使位错等缺陷增加，有利于硼原子的吸收与扩散。

The nano-CeO_2 crystal with high pureness , high specific surface area , and high crystal lattice defects was produced by ions exchange method .

并用离子交换法合成出高纯度、高比表面积、高晶格缺陷的纳米CeO2晶体。

The formation and evolution of the lattice defects are proved to restrain the colouring and luminescence of the diamond .

证实晶格缺陷的形成与演化共同制约了钻石的呈色和发光。

However , lattice defects have an important effect on the geometric stucture and electronic structure of crystal materials so that it will affect the reaction activity .

晶格缺陷对晶体材料的几何和电子结构都有较大的影响，因此会影响到材料的反应活性。

Ions of additives cause the lattice defects in the crystal of sulfation product layer , that dramatically promote the product layer diffusivity ;

由于添加剂所加离子的掺杂，引起固硫产物层晶格的缺陷，大大提高了产物层扩散系数；

The changes of crystal structure , lattice defects and film integrality with the sulfidation processes are responsible for the changes of the optical and electrical characterizations .

由于硫化参数的变化能够引起薄膜相结构、晶体缺陷及薄膜完整性的变化，因此可以导致薄膜光电性能的变化。

It is considered that the signal intensity of the system resulted from the superposition of signal intensity of NTP radicals and free electrons trapped in the lattice defects .

认为该谱是由NTP自由基和晶格缺陷中的陷落电子两部分谱线迭加而成。

These changes in electrical properties are explained by a decrease in the number of Mn acceptors because of the forming of MnAs phase and the resuming of lattice defects during annealing .

这是由于在退火过程中，随着退火温度的升高，有更多的Mn参与MnAs相的形成，使得以替位受主形式存在的Mn减少，并且晶格缺陷得到恢复所致。

There are a great many lattice defects , such as a vacancy type of Frank dislocation loops which dimension is very tiny , and a type of coiled dislocations and stack faults .

在γ'-Fe4N晶粒内有许多尺寸较小的空位型Frank位错环及其蜷线位错和堆垛层错等晶体缺陷；

Annealing at 300 ℃, the precipitates are nucleated preferentially at lattice defects , such as dislocations and sub-boundaries , higher cold reduction results in a larger number of precipitates .

在300℃退火时，析出相优先在位错、亚晶界等点阵缺陷处形核，较大的冷轧变形量将导致更多的析出；

In addition , when the catalysts dimensions are reduced to nano scales , they will show unique catalytic characteristics due to the high density of crystal lattice defects , the large surface area and the high surface energy accordingly .

此外，纳米材料由于具有大的比表面积，高密度表面晶格缺陷和高表面能等特性适合作高活性催化材料，纳米Ni-Al合金的制备和应用涉及到大量的纳米理论和技术问题。

Comparing with the conventional implantation technology , the problems such as the limitation of the reduction of the base junction depth due to the secondary channeling and the lattice defects formed by high dose implantation , can be easily solved .

与离子注入工艺相比，这种工艺可轻易地解决诸如高剂量离子注入所产生的下列问题：二次沟道效应对基区结深减小的限制及晶格损伤。

Doping other ion into oxide matrix , could cause lattice defects such as vacancies , interstitials and antisites , which play an important role in modifying the physical and chemical properties of mother oxide at a certain extent .

在氧化物的晶格中掺入外来元素会产生空位、间隙原子、置换原子和位错等晶格缺陷，而这些缺陷的产生可以在一定程度上促进母体氧化物的物理和化学性能。

The scattering diffusion due to thermal vibration and lattice defects in the crystalline part of the substance has been taken into consideration . The accuracy of measurement is improved by the special absorption correction of Compton scattering using standard scattering curve .

这种方法考虑了热振动引起的散射扩散和物质结晶部分晶格的不完善性，并利用标准的散射曲线对康普顿散射进行特殊的吸收校正，从而提高了测量结果的准确性。

The preferential growth direction of the nanorods was [ 11 - 2 ] and there were high concentration of oxygen vacancy and lattice defects in the nanorods . The formation mechanism of the nanorods and their hierarchical structures were also discussed .

所得到的纳米棒生长方向为[11？2]，纳米棒中存在有高浓度的氧空位和明显的位错缺陷，讨论了纳米棒及其多级结构的形成机理。