inverse voltage
- 反向电压;反电压
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The push-pull output circuit made up of a pair of MOSFETs was used in the driver circuit . The Pspice simulation results indicated that the peak inverse voltage on MOSFET switch could be clamped by RCD .
利用Pspice软件对开关上有无剩余电流电路(RCD)两种情况进行仿真,结果表明,加装RCD电路可以有效吸收MOSFET在关断瞬间产生的反峰电压。
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Using colloid SiO 2 source with boron and aluminum , the fast reverse recovery diode was made . Its t rr is shorter than 5 μ s and the inverse voltage is higher than 1000 V. The structure features and diffusive techniques are described in the paper .
使用硼铝二氧化硅乳胶源研制出反向快恢复整流二极管,其反向恢复时间trr≤5μs,反向耐压>1000V。介绍了该器件的结构特点及扩散工艺。
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Anti - inverse charge of voltage current switching over
电压切换回路防止反充电
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Using this sub-circuit , minimum duty-cycle is proportional to output voltage and inverse proportional to input voltage .
这个模块生成的最小占空比与输出电压成正比,与输入电压成反比。