ingaas

The system consisted of light source , interferometer , fiber optical sensor , InGaAs detector , data collection card and fruit holder .

建立水果的内部品质自动检测系统由光源、迈克尔逊干涉仪、近红外漫反射光纤探头组件、铟镓砷检测器、数据采集卡和水果样品室等部件组成。

According to band gap theory , we calculated the thickness of saturable absorber . With Lorentz model , we simulated the dielectric function of thin InGaAs absorber .

通过禁带理论计算出可饱和吸收层的厚度，利用洛伦兹模型重新建立了薄铟镓砷吸收层的介电函数。

Application of Calibration Method to the Optic Spectrum Line of Linear InGaAs

线阵InGaAs光谱谱线定标方法的应用

Design of low noise circuitry using InGaAs detector for spatial remote sensing

空间遥感用InGaAs探测器低噪声电路系统设计

Study on Low Frequency Noise of InGaAs Infrared Detectors with Two Passivation Structures

两种钝化结构InGaAs红外探测器低频噪声的研究

Study on low frequency noise of InGaAs infrared detectors

InGaAs红外探测器低频噪声研究

The effect of growth temperature on the properties of InGaAs by lp-mocvd

LP-MOCVD生长温度对InGaAs性能的影响

Temperature dependence of optical gain in InGaAs quantum dots laser

InGaAs量子点激光器光增益的温度特性

Planar InGaAs PIN Photodiode with High Quantum Efficiency Low Dark Current and High Reliability

具有高量子效率、低暗电流、高可靠性的平面InGaAsPIN光电二极管

320 × 256 InGaAs Short Wave Infrared Focal Plane Arrays Detector

320×256InGaAs短波红外焦平面阵列探测器

Comparative study of two kinds of InGaAs / InP PIN photodetectors

两种InGaAs/InPPIN光探测器比较研究

Optical characteristics of InGaAs vertically coupled quantum dots vertical limit Chinese knot

垂直电子耦合InGaAs量子结的光学特性

The Calculation of InGaAs / InP Strained Quantum Well Energy Bands

利用K·P方法计算InGaAs/InP应变量子阱的能带

Theoretical Analysis of Front Illuminated Structure for Long Wavelength InGaAs Diffusion PIN Photodiode

长波长InGaAs扩散结PIN光电二极管正面入光结构的理论分析

Highly accurate optical radiation calibration of InGaAs trap based on cryogenic radiometer

基于低温辐射计的InGaAs陷阱探测器高精度光辐射定标研究

Study on Physics and Devices of InGaAs Infrared Detectors

InGaAs红外探测器器件与物理研究

Research on the Ion implantation of Be into InGaAs

InGaAs中Be离子注入的研究

High polarization properties of single-photon emission from anisotropic InGaAs quantum dots

各向异性量子点单光子发射的高偏振度特性

Optical Properties of InGaAs / GaAs Strained Layer Quantum Wells

InGaAs/GaAs应变层量子阱的光学性质

Dark Current Characteristics of Double Heterojunction Wavelength Extended InGaAs PIN Photodetectors

双异质结扩展波长InGaAsPIN光电探测器暗电流研究InGaAs短波红外探测器的偏振响应特性分析

GaAs based InP / InGaAs HBT for monolithic integrated optical receiver application

用于单片集成光接收机前端的GaAs基InP/InGaAsHBT

The Study of InGaAs / InP Bulk Material Grown by MOCVD

MOCVD生长InGaAs/InP体材料研究

Theoretical Analysis and Optimum Design for InGaAs ( P ) Strained Multiple - Quantum - Well Lasers

InGaAs（P）应变多量子阱激光器的理论分析与优化设计

Fabrication of short wavelength infrared ingaas / inp photovoltaic detector series

短波红外InGaAs/InP光伏探测器系列的研制

Study on Electro deposition of InGaAs Thin Film

InGaAs薄膜电共沉积研究

High quality highly strained InGaAs / InP materials were obtained by using strain buffer layer .

采用应变缓冲层技术，得到质量良好的大应变InGaAs/InP体材料。

Study on InGaAs / GaAs Strained Quantum well Lasers

InGaAs/GaAs应变量子阱半导体激光器的研究

Study of Dry Etching InP / InGaAs Based on Cl_2-based Gas

基于Cl2基气体的InP/InGaAs干法刻蚀研究

Low Threshold Current Density InGaAs / GaAs / AlGaAs Strained Quantum Well Lasers

低阈值电流密度INGaAs/GaAs/AlGaAs应变量子阱激光器

The InGaAs semiconductor laser output wavelength increases along with the temperature and the operating current increases .

InGaAs半导体激光器输出波长随温度和工作电流增加而增加。