gan

And the adjacent wu dialects and gan language more , both relation and difference .

与相邻的吴语和赣语比较，既有联系又有区别。

Analysis of the Influence of Ancient Chinese on the Formation and Development of Gan Dialect from the Perspective of Vocabulary Components

从词汇成分看古汉语对赣语形成与发展的影响

Shaoling 's writings are pictures without forms ; han gan 's paintings are unspoken poems .

少陵翰墨无形画，韩干丹青不语诗。（苏轼《韩干马》）

All people who have known what I felt are not surprised when they saw me eating three piece of bread with a bottle of Lao Gan Ma .

所有尝过的人，在看到我抱着一瓶老干妈吃了三片面包时都不会吃惊。

Application of Scenario Analysis to the Planning of Gan River Basin

情景分析法在赣江流域水污染控制规划中的应用

Studies on electronic structure of GaN ( 0001 ) surface

GaN（0001）表面的电子结构研究

Construction and operation management of rural drinking water safety projects in Gan county

谈赣县农村饮水安全工程建设与运行管理

GaN is a new wide band gap semiconductor laser material .

GaN是一种新型的宽禁带半导体兰色发光与激光材料。

Design of MOCVD control system on GaN growth

GaN系半导体材料生长的MOCVD控制系统设计与实现

A method is presented by analyzing some of the GaN film Surface images .

文章通过对若干幅GaN薄膜缺陷图像的分析，提出一种GaN薄膜缺陷密度的提取方法。

GaN based LED and laser diode have been broadly used .

基于GaN的半导体发光二极管（LED）和半导体激光器（LD）已被广泛应用。

Curve Analysis of Real-time Interference in GaN Film Growth by MOCVD

MOCVD生长GaN薄膜的实时干涉曲线分析

The influence of different technological parameters to the morphology of GAN was studied .

研究了实验过程中工艺条件的改变对所制备GaN纳米结构形貌特征的影响。

Gan River Lower Reaches Stream Transition and Influence to Environment

赣江下游河道变迁及对环境的影响赣中

Extraction of GaN HEMT Small Signal Equivalent Circuit Model Using an Improved Algorithm

用改进算法提取GaNHEMT小信号等效电路模型

Gan and her living together for some time .

她和甘一致生存了一段日子。

Electrical Properties of the Contact of Solid C 60 and n GaN

固体C（60）/n-GaN接触的电学性质

And MOCVD technology has obvious advantages in growing GaN materials .

采用MOCVD技术进行GaN系列材料生长具有明显优势。

Finite Element Model of GaN Based LED and the Optimization of the Mesa Structure

GaN基LED电流扩展的有限元模型及电极结构优化

OBJECTIVE : To establish standard for quality control of Gan Xin Granule .

目的：制定肝星颗粒剂的质量标准。

Ohmic contact is a critical technology for preparing GaN based devices .

欧姆接触是制备GaN基器件的关键技术之一。

The investigation on the gas phase doping epitaxial growth of GaN

气相外延氮化镓掺杂生长的研究

First principle study of Mg , Si and Mn co-doped GaN

第一性原理研究Mg，Si和Mn共掺GaN

Low temperature transient of deep center Zn in GaN

GaN深中心Zn的低温瞬态研究

Research and Development of GaN Semiconductor

GaN半导体研究与进展

GaN Growth on Si Substrate Using Anodic Alumina as Buffer Layer

阳极氧化铝作缓冲层的Si基GaN生长

A study on the fluxes of GaN crystal growth

关于GaN晶体生长助熔剂的研究

The analysis of water pollution state of south branch of The Gan River lake inlet

赣江南支入湖口水污染状况分析

Influence of Nitriding Technology on Growth of GaN Buffer

氮化工艺对GaN缓冲层生长的影响

Effect of Epitaxy Growth Conditions on Morphology of GaN

外延生长条件对GaN形貌的影响