The conduction band

Electrical Test and Evaluation on the Conduction Band Defects of Hybrid Integrated Circuits

HIC导带缺陷的电学检测与评估

However doping has no obvious effect on the conduction band tail .

重掺杂还加宽了价带带尾。

Carriers are transported in the conduction band of the semiconductor to the charge collector .

承运人运输的半导体的导带电荷收集。

Photovoltaic studies on the conduction band discontinuity of ZnSe / GaAs heterojunctions

光生电压谱方法对Znse/GaAs异质结导带偏移的研究

Compared with HOPG , new electronic states appear in the conduction band of graphene because of the weak interaction between graphene and Cu .

此外，与石墨相比，石墨烯的导带出现新的电子态，这可能是由石墨烯与衬底之间的相互作用引起的。

The conduction band offset and the interface charge density are derived from the apparent carrier concentration distribution obtained by the C-V profiling techniqe .

采用C-V法测量Si/GaP（Ⅲ）异质结的表观载流子浓度分布n（x），从中导出了异质界面的导带失配值和界面电荷密度。

Quantum cascade laser ( QCL ) is a kind of semiconductor laser which rely on optical transitions between quantized states of the conduction band .

量子级联激光器（QCL）是一种通过电子在导带量子阱中子能级之间跃迁发光的半导体激光器。

Fermi level was significantly increased after F-doping , and the conduction band crossed the Fermi level , so F-doping could increase the conductivity .

掺杂F后费米能级增大显著，且导带穿过费米面，故掺F后体系导电性提高。

The conduction band states near the Γ valley mainly originate from the X valley of bulk Si conduction band which is formed from Brillouin zone folding in superlattices .

两类超晶格的导带Γ能谷的状态主要由Si层的原来体导带X能谷经布里渊区折叠而组成。

Besides , doping of transition metals into makes the conduction band moving down and valence band up due to sp-d orbital hybridization coupling and then narrows bandgap .

此外，过渡金属进入ZnO晶格中之后，由于ZnO和金属离子的sp-d轨道杂化耦合作用，使价带上移导带下移，从而使ZnO带隙变窄。

In this report , we investigated the conduction band structures of several types of semiconductor low-dimensional semiconductors subjected to external electric and magnetic fields . Our theoretical and computational results can be used to design tunable THz emitters .

本文中我们主要研究了在电场和磁场作用下几种半导体低维结构的能带结构、光学性质和电子动力学行为，并提出了一种可能的可调谐THz辐射源理论设计方案。

Empty Spheres Effect on the Structure of Conduction Band of Alkaline - Earth Sulphide SrS

空原子球对SrS导带结构的影响

The hybridization of conduction band is studied for close-packed compounds by means of LMTO method .

用LMTO能带论方法分析了密堆结构复式格子的导带中角动量杂化情况变化的规律。

The characteristics of conduction band and forbidden band of photonic crystals are investigated with a macroscopical chord vibrating system indirectly .

得到了类比于光子晶体的亥姆霍兹方程的弦振动系统的本征值方程，并利用该方程研究了光子晶体的导带和禁带特征。

The minimum of the conduction band is found at Γ 1 point .

得出了价带位置和能隙宽度，导带的最小点在Γ1。

The electronic structure of conduction band near Fermi level is changed markedly , especially for Ni .

费米面附近导带的电子结构变化较大；

The valance band and conduction band can be described very well by our calculated results as well .

同时，计算的结果也能对价带和导带进行很好的描述。

By fitting of band-to-band absorption edges , the bandgap of Si conduction band to Ge valence band is acquired .

通过对锗硅量子点和量子阱材料的光电流谱的带间跃迁吸收边的拟合，得到了硅导带到锗价带的能带宽度分别为1.043eV和1.050eV。

SPR is a physical concept of describing the collective oscillations of conduction band electrons in the electromagnetic field , which is influenced significantly by size , shape and surrounding medium .

金属纳米颗粒中的表面等离子体共振是描述其导带电子在电磁场作用下集体振荡的一个物理概念，共振性质受尺寸、形状以及周围介质影响非常显著。

The empty spaces in the conduction band are at too high an energy level to be of use .

导带里的空间则由于能量太高而无法利用。

It is found that in a high electric field electrons can transit from the valence band to the conduction band , which is demonstrated to be Zener tunneling in organic semiconductors .

发现在足够高的电场下，价带中的电子可以穿过带隙进入导带，即有机聚合物中的齐纳隧穿现象。

Because the transition within the same conduction band ( or valence band ) between different sub-bands rely on the direction of light polarization field closely . Thus it is a main problem for this type of detector .

由于同一导带（或价带）内不同子带间的跃迁密切依赖于光极化场方向，因而这类探测器存在的主要问题是对垂直光入射吸收的禁戒性。

The model includes the production of conduction band electrons ( CBE ), laser energy deposition and CBE diffusion .

研究了导带电子的扩散对材料中激光能量的沉积、分布、破坏阈值和烧蚀深度的影响。

Finally the variety of the density of conduction band electrons in the ablation process is discussed and the experimental result with avalanche mode is interpreted .

讨论了飞秒激光照射下LiF晶体中导带电子数密度的变化规律，并解释了相应的实验结果。

When one Sn atom is replaced by one Sb atom , the Fermi level moves into the conduction band and the compound displays metallic band structure .

当用一个Sb原子替代一个Sn原子之后，费米能级上移到导带中，表现出类金属的能带结构。

The interband transitions between the subbands of conduction band and valence band for the Quantum wells and superlattices of semiconducters are discussed .

本文讨论半导体超晶格及量子阱导带和价带的量子化亚带或子能级之间的带间光跃迁过程。

As one of main components of dye-sensitized solar cells ( DSCs ), dye sensitizer takes the function of injecting the photo-excited electrons into conduction band of semiconductor . The oxidized dye is then regenerated by the redox couple in electrolyte .

光敏染料作为染料敏化太阳能电池的主要部分之一，起到吸收光子并将电子注入到纳米半导体导带中的作用，同时产生的氧化态染料又能快速被电解质中的氧化还原电对还原再生。

The process of decay of photo-generated electrons in the conduction band of ZnO : Zn and ZnO powder materials after excitation with a ultra-short pulse laser has been investigated in this paper by microwave absorption method .

采用微波吸收法，测量了ZnO及ZnO：Zn荧光粉末材料受到超短激光脉冲激发后其导带电子的衰减过程，并测量了室温下荧光材料的吸收光谱和发射光谱。

Effective masses at the top of valence band and at the bottom of conduction band were deduced from band structure .

价带顶和导带底的有效质量从计算得到的能带结构中求出。

Thus , the associated electron transition among the valence band , the conduction band and the gap states results in the red-shift of light absorption .

因此，相关的价带、导带和隙态的电子跃迁导致吸收边红移。