Schottky Barrier

Application of the High Frequency C-V Method in the Failure Analysis of Schottky Barrier Contact Degradation

高频C-V法在肖特基势垒接触退化失效分析中的应用

Metal / Organic High Molecular Layer / n-lnP Schottky Barrier

金属/有机高分子膜/n-InP肖特基势垒

Life Prediction of Power Schottky Barrier Diode Based on the Method of Parameter Degeneration

基于参数退化法评价功率肖特基二极管寿命

Investigation on Materials Growth and Device Fabrication of Schottky Barrier Diodes

肖特基二极管相关材料生长及器件研究

Research on Guard Ring Structure of Schottky Barrier Diode

肖特基二极管保护环结构的研究

Current Transport Under High Magnetic Fields in Ni / 4H-SiC Schottky Barrier

Ni/4H-SiC肖特基势垒磁场下输运性质的分析

Study on Gas Sensitivity of Pt / InP Schottky Barrier Diode

Pt／InP肖特基二极管气敏特性的研究

Application of Power Factor Correction Circuits with SiC-Based Schottky Barrier Diode

SiC肖特基势垒二极管在PFC电路中的应用

An Infrared Bi Color Schottky Barrier CCD Image Sensor for Precise Thermal Images

清晰热成象红外双色肖特基势垒CCD图象传感器

Series resistance is an important factor confining the response speed of Schottky barrier diode .

串连电阻是制约肖特基二极管响应速度的一个关键因素。

Investigation of optical cavity structure in PtSi Schottky barrier focal plane arrays

PtSi肖脱基势垒红外焦平面光腔结构的研究

The Second Differential Method for the Determination of Dopant Concentration Profile and Schottky Barrier Height

测量外延层中杂质分布及肖特基二极管自建势的二次微分法

Computer Analyses of 3C - SiC Schottky Barrier Diode Characteristics

3C-SiC功率肖特基二极管特性的计算机分析

The threshold voltage of SiC Schottky barrier source / drain MOSFET

SiC肖特基源漏MOSFET的阈值电压

Investigation of the Grain Boundary Barriers about the Semiconductor Ceramic of Schottky Barrier Mode Device

半导体陶瓷Schottky势垒型器件晶界势垒问题探讨

The Development of Pt / CdS Schottky Barrier Ultraviolet Detector

Pt/CdSSchottky势垒紫外探测器的研制

Avalanche noise source of Schottky barrier diode in the 3 mm band

3mm肖特基势垒二极管雪崩噪声源

Interface analysis and electric characteristics of palladium SILICIDE-P-TYPE Silicon Schottky barrier diode

硅化钯-P型硅肖特基势垒二极管的界面分析与电特性

Determination of Quasi - Fermi Level within Schottky Barrier from its I-V Characteristics

利用I-V特性确定Schottky势垒中的准费米能级

The Research of LaB _6 / GaAs Schottky Barrier

LaB6/GaAs肖特基势垒研究

Effect of Structure Parameters on the Performances of GaN Schottky Barrier Ultraviolet Photodetectors and Device Design

结构参数对GaN肖特基紫外探测器性能的影响及器件设计

The enhancement of photocatalytic activity is attributed to energy band matching and Schottky barrier effect .

光催化性能的提高主要归因于异质结构的能带匹配和肖特基势垒。

Carrier Trapping Effects on the Electric Field in a-Si ∶ H Schottky Barrier Solar Cell Structures

a－Si∶HSchottky势垒太阳能电池结构中载流子俘获对电场的调制效应

The idea factors , Schottky barrier heights and specific resistances are obtained for different temperatures .

分别得到了理想因子、肖特基势垒高度和串联电阻在395K和528K温度下的数值。

In this paper , We propose a new approach to the analysis of α & Si schottky barrier profile .

本文提出一个关于非晶硅肖特基势垒（α&Si.S.B.）剖面的新的分析方法。

Analytical model for I-V characteristics of 4H-SiC Schottky barrier diodes

4H-SiC肖特基势垒二极管伏-安特性的解析模型

Schottky barrier diodes with different metal on III nitride have been fabricated .

研制了三类不同金属和III族氮化物接触的肖特基势垒二极管。

Schottky barrier gate field effect transistor

肖脱基势结型场效应晶体管

This paper described the design thinking and the working principle of schottky barrier diode reverse impulse energy tester .

本文叙述了肖特基二极管及反向脉冲能量测试仪的设计思想及工作原理。

The gate metal is Al , which has Schottky barrier interface with copper phthalocyanine .

栅极金属是Al，与酞菁铜界面形成肖特基势垒。