RHEED

The effect of electron diffraction conditions on RHEED intensity oscillations during si ( 111 ) MBE

电子衍射条件对Si（111）外延时反射式高能电子衍射强度振荡的影响

In Situ monitoring of Epitaxy Growth by Differential RHEED under High Pressure

高压强下外延生长的差分RHEED原位监测

Acquisition system of RHEED intensity oscillations and its application during the MBE growth

分子束外延反射式高能电子衍射的强度振荡采集系统及其应用

The RHEED Analysis of GaAs Samples in MBE System

MBE系统中GaAs样品的RHEED分析

PEMOCVD Method with RHEED in Situ Monitoring and Low Temperature Growth of GaN Based Films

RHEED原位监测的PEMOCVD方法及GaN基薄膜低温生长

A study of RHEED pattern from the epitaxial growth of Si-Ge crystal

在Si-Ge晶体外延生长中的RHEED花样研究

Application of RHEED in the Calculation of Al_2O_3 Interplanar Distance

RHEED在计算Al2O3晶面间距中的应用

Analysis of Semiconductor Film with RHEED

用RHEED方法分析半导体薄膜特性

The samples were analyzed by XRD , AFM , RHEED and Electronic Probes .

通过XRD、AFM、RHEED、电子探针等分析手段对样品进行了分析。

Optimized MBE heterostructure material growth technology by RHEED

RHEED优化MBE异质材料生长工艺

RHEED images of GaAs and Al_2O_3 substrates cleaned by hydrogen or nitrogen plasma

等离子体清洗GaAs和Al2O3衬底的RHEED图像分析

The growth dynamics of si ( 111 ) MBE studied by RHEED intensity oscillations

Si（111）分子束外延的生长动力学过程研究

RHEED Research on GaSb Film Growth by MBE

GaSb薄膜生长的RHEED研究

In situ monitoring of the growth of complex oxide thin films at high oxygen pressures using a three-stage pumping RHEED system

高氧压下氧化物薄膜同质和异质外延的RHEED实时监测

Phase-locked epitaxy of ge / si superlattices by using RHEED intensity oscillations

用RHEED强度振荡锁相外延控制Ge/Si超晶格的生长

RHEED intensity oscillations in the process of molecular beam epitaxy growth of Ge and Si on Si substrates

Si衬底上分子束外延Ge，Si时的反射式高能电子衍射强度振荡观察

Study of ECR-Plasma Cleaning and Nitridation of Sapphire Substrate by RHEED

蓝宝石衬底的ECR等离子体清洗与氮化的RHEED研究

One RHEED oscillation of GaSb takes 1.96s , therefore 0.51 monolayers is deposited per second .

实验测量GaSb的生长周期为1.96s，每秒沉积0.51单分子层。

The RHEED pattern of the ultra thin LNO film deposited in the relatively high oxygen pressure is streaky pattern .

当氧分压在临界值以上时，LNO薄膜在整个沉积过程中（膜厚小于30nm）的RHEED图样是条纹状，表明层状方式外延生长的特征。

Study of si ( 100 ) and ( 111 ) surfaces and molecular beam epitaxy of Ni on them by RHEED

Si（100）和（111）面和在其上Ni分子束外延的反射高能电子衍射研究

Using the RHEED to study the MBE heterostructure material growth technologies , the AlGaAs / InGaAs / GaAs material growth technologies are optimized .

利用高能电子衍射振荡研究MBE异质材料生长工艺。优化了AlGaAs/InGaAs/GaAs材料生长工艺。

The growth surfaces of fihns were monitoring in situ by reflective high-energy electron diffraction ( RHEED ) in the whole process .

在整个实验过程中，用反射高能电子衍射（RHEED）原位监测膜生长。

When employing a low-temperature ZnO homo-buffer layer , high-quality epitaxial ZnO thin films are obtained as reflected by the aligned spotty RHEED images .

相比之下，生长在一低温同质缓冲层上的ZnO薄膜则展现出规则的斑点状RHEED图像，说明它们都是外延生长的高质量ZnO薄膜。

The cleaning of hydrogen and nitrogen ECR plasma on sapphire substrates are carried out in the calibrated temperature system and evaluated by analyzing RHEED image in ECR-PEMOCVD system .

最后讨论了在经过校温的系统上进行蓝宝石衬底的氢氮等离子体清洗实验，并通过RHEED图像评价清洗结果质量。

Surface damage caused by cutting on Si , InSb , HgCdTe has been studied by Reflection High Energy Electron Diffraction ( RHEED ) after step-etching the samples .

利用高能反射电子衍射技术（RHEED），研究了硅、锑化铟、碲镉汞样品逐次化学腐蚀后的切割表面损伤。

Rheed images of cleaned GaAs and Al_2O_3 substrates indicated that GaAs substrate needs about one minute for hydrogen plasma cleaning , but the surface of substrate becomes uneven after 4 ? minutes .

CCD的RHEED图像分析表明，在一定条件下用纯氢等离子体对GaAs衬底清洗只需1min左右，即可得到比较平整的清洗表面，但清洗2min以上表面质量开始变坏。

AES and RHEED techniques have been applied to a study of temperature dependence of the sticking coefficient of In atoms on the Si ( lll ) 4 × 1-In surface .

用AES和RHEED研究铟原子在Si（111）4×1-In结构表面粘着系数与温度的关系。

The result indicated that RHEED was ad - vance for monitoring the growth of epitaxy film in situ , but also was a strongly tool for analyzing the crystal lattice transformation of epitaxy film .

结论指出，RHEED不仅是进行外延薄膜原位监测，而且还可以作为分析外延薄膜晶体结构演变的一个有力手段。

The reflection high-energy electron diffraction ( RHEED ) mounted in the electron-cyclotron-resonance plasma-enhanced metal organic chemical vapor deposition ( ECR-PEMOCVD ) system designed by us was used to monitor the GaN growth process in-situ .

通过在自制的电子回旋共振等离子体增强金属有机物化学气相沉积（ECR-PEMOCVD）系统上装配反射高能电子衍射仪（RHEED），对外延GaN生长过程进行原位监测。

In situ RHEED observations reveal that ZnO thin films directly deposited on Si have a polycrystalline structure , and the crystallinity is deteriorated with an increase of the substrate temperature from 550 to 700 ℃ .

对于用PLD工艺制备的ZnO薄膜，RHEED测试证明直接沉积在Si衬底上的薄膜为多晶薄膜，且结晶质量随生长温度的升高而衰退。