LPCVD

Cascade Temperature Control with High Accuracy in LPCVD Equipment

LPCVD设备的高精度串级温度控制系统

LPCVD is extensively used for its good performance on step coverage .

由于LPCVD在优化台阶覆盖上具有优势，因此被广泛的研究和使用。

Study on the Preparation and Characteristics of LPCVD TiO 2 Thin Film

减压法制备TiO2薄膜及影响因素的研究

Deposition of Carbon Nanotubes Film by LPCVD and Related Field Emission Property

LPCVD法制备碳纳米管薄膜及其场发射性能的研究

Internal Stress Measurement of LPCVD Silicon Nitride Deposited on Different Substrates

不同牺牲层材料上LPCVD氮化硅薄膜内应力的测试与研究

The study of surface oxide film on LPCVD silicon nitride by XPS

LPCVD氮化硅表面氧化膜的XPS研究

Analysis of Fogging During Deposition of Polysilicon Thin Film in LPCVD System

LPCVD系统淀积多晶硅薄膜的发雾分析

Study of the deposition process of the SIPOS thin film prepared by LPCVD

LPCVD制备SIPOS薄膜淀积工艺的研究

Investigation on Properties and Application of LPCVD Semi-Insulating Polycrystalline Silicon

LPCVD半绝缘多晶硅的性质和应用研究

Properties and hydrogenation of boron doped silicon films by LPCVD

LPCVD法制备硼掺杂硅薄膜特性及氢化

Characterization of SiNx Film Based on SiH_4-NH_3-N_2 System Prepared by LPCVD

SiH4-NH3-N2体系LPCVD氮化硅薄膜的研究

Polysilicon film is deposited by LPCVD method on heavily doped P - type silicon .

在重掺杂P型单晶硅上，用LPCVD法生长多晶硅薄膜，离子注入磷后，形成P＋N结。

Stress in SiN_x Film Embedded with Silicon Nanocrystals Preparing by LPCVD

LPCVD制备纳米硅镶嵌结构氮化硅膜及其内应力

Electrical properties of LPCVD polysilicon doped with oxygen atoms

LPCVD掺氧多晶硅电学特性研究

The compensation of defects and doping in LPCVD a-Si films

LPCVDa&Si薄膜的缺陷补偿和掺杂

Fabrication Technology of LPCVD Polysilicon Thin Film

LPCVD多晶硅薄膜制备技术

Preparation Technologies of LPCVD Silicon Nitride Films

LPCVD氮化硅薄膜的制备工艺

Modeling and Analysis of LPCVD Reactors

低压化学蒸气淀积（LPCVD）反应器的模拟和分析

The Crystal Structure of LPCVD Polysilicon Films

LPCVD多晶硅薄膜的晶体结构

Fabrication of Germanium Inverse Opal Three-dimensional Photonic Crystal by LPCVD

低压化学气相沉积技术制备锗反蛋白石三维光子晶体

ESR characteristics of high-quality semi-insulating 4H-SiC crystal prepared by LPCVD

LPCVD法制备的高纯半绝缘4H-SiC晶体ESR谱特性

LPCVD Nitrides Furnace Process Particle Improvement Preliminary Research on Production Low Carbon Low Silicon Non-oriented Electrical Silicon Steel Mid-wide Strip

LPCVD氮化硅炉管生产工艺中颗粒污染的研究低碳低硅中宽冷轧无取向电工钢带生产初探

Luminescence from Silicon Nitride Film by LPCVD

LPCVD氮化硅薄膜的室温可见光发射

The electrical conductivity of LPCVD SIPOS films has been measured to study the electrical properties cf SIPOS .

本文通过测量电导率特性对LPCVD掺氧多晶硅（SIPOS）的电学特性进行了研究。

Temperature is one of the most important parameters in the most semiconductor process . The uniformity and stability of furnace temperature have essential influence on the LPCVD process .

在大部分半导体工艺中，温度都是最重要的工艺参数之一，炉温的均匀性和稳定度对工艺都有着至关重要的影响。

This paper introduced the preparation technologies and properties of CVD for Si_3N_4 films and the process of low pressure chemical vapor deposition ( LPCVD ) .

简要介绍了Si3N4膜的制备方法及CVD法制备的Si3N4薄膜的特性，详细介绍了低压化学气相淀积（LPCVD）氮化硅的工艺。

The effects of phosphorus content on magnification of PNP transistor in PSG film by LPCVD have been investigated .

本文研究了以低压化学气相淀积方法生长PSG表面钝化膜中磷的含量对横向PNP管放大倍数的影响。

Insitu Doping of Polysilicon Films by PECVD and LPCVD

多晶硅膜的PECVD和LPCVD原位掺杂研究

Based on a theoretical model for LPCVD , computer simulation of PECVD polysilicon films has been performed by employing the concept of " electron temperature " .

在LPCVD理论模型基础上，通过引进电子温度，对PECVD多晶硅膜进行了计算机模拟分析。

It shows severe hump without capping silicon nitride layer due to moisture diffusion during thermal anneal after inter layer oxide deposition by LPCVD .

它表明没有覆盖硅氮化层的严重驼峰取决于经过LPCVD的内部涂层氧化沉淀后化学处理期间的湿度扩散。