INAS

Analysis of Atomic Force Microscopic Results of InAs Quantum Dots

InAs量子点的原子力显微镜测试结果分析

The growth mechanism of InAs quantum dots and wires is discussed in detail .

讨论了量子点和量子线的形成机理。

The lattice perfection of the InAs single crystal is studied with X-ray diffraction .

利用X射线双晶衍射分析了晶体的完整性。

Study of Self-organized InAs / GaAs Quantum-dots Using Double Crystal X-Ray Diffraction

自组织InAs/GaAs量子点的X射线双晶衍射研究

Study of rapid carrier capture and relaxation in inas / gaas heterostructures

InAs/GaAs低维结构中载流子快速俘获过程的研究

Electronic Structures of Strained-layer Superlattices InAs / GaAs Under Different Strain Conditions

不同应变状态下超晶格InAs／GaAs的电子结构

Current transport properties of GaAs Schottky diode containing InAs self-assembled quantum dots

InAs自组装量子点GaAs肖特基二极管中的电流输运特性

Annealing effects of self assembled inas / gaas quantum dots

自组织生长InAs/GaAs量子点的退火效应

Annealing Effects of Self-Assembled InAs Quantum Dots With Different Thick GaAs Cap Layers

不同厚度GaAs覆盖层对自组织生长InAs量子点退火效应的影响

The influence of InAs quantum dots on the transport properties of Schottky diode

InAs量子点在肖特基势垒二极管输运特性中的影响

Electronic Structures of InAs / InP Rectangular Quantum Wire

磁场下InAs/InP矩形量子线中的电子结构

In this thesis , we have made theoretical analysis and growth of InAs / GaAs quantum dots .

本论文在InAs/GaAs量子点方面做了理论分析和工艺生长。

Study of Molecular Beam Epitaxy InAs Multilayers Dots by TEM

分子束外延InAs量子点材料的透射电子显微镜研究

Study of vertically aligning growth of self assembled inas / gaas quantum dots

自组织InAs/GaAs量子点垂直排列生长研究

Hole capture barrier of self organized InAs quantum dots

InAs自组织生长量子点的空穴俘获势垒

Short period inas / gasb Superlattice Infrared Detector on GaAs substrates

GaAs基短周期InAs/GaSb超晶格红外探测器研究

Photoluminescence Studies of Wetting Layer in InAs / GaAs Self-Organized Quantum Dot Structures

InAs/GaAs自组织生长量子点结构中浸润层光致发光研究

A method of correcting INAS error based on landmark image messages is described , emulating results are presented .

提出了一种基于地标图像信息的惯导系统误差校正方法，并进行了仿真实验研究。

Growth of Self-assembled InAs Quantum Dots Emitting at 1.55 μ m

1.55μm波长发光的自组织InAs量子点生长

The photoluminescence in directly si doped self organized InAs quantum dots was systematically studied .

研究了较低掺杂浓度时InAs量子点中直接掺杂Si对其发光特性的影响。

Formation of InAs Quantum Rings on GaAs Substrate

GaAs基上的InAs量子环制备

InAs / GaAs self-assembled quantum dots with boron incorporation were studied .

研究了掺硼的InAs/GaAs自组织量子点样品。

Study of InAs / GaAs Quantum Dots

InAs/GaAs系列量子点研究

In situ , Scanning Tunneling Microscope Studies of InAs / GaAs Self Organized Quantum Dots

扫描隧道显微镜对InAs/GaAs自组织生长量子点的准原位研究

This provides a foundation for us in obtaining order InAs / InP self assembled quantum dots .

为提高InAs/Inp自组装量子点特性提供了理论依据。

The investigation on the multilayer vertical aligned InAs quantum dots grown by MBE

MBE自组织生长多层竖直自对准InAs量子点结构的研究

The effect of dopant Si on the uniformity of self-organized InAs quantum dots

杂质Si对InAs自组织量子点均匀性的影响

Effects of Covering Layer on Extending the Emission Wavelenghs of InAs Quantum Dots

超晶格覆盖层对拓展InAs量子点发光波长的影响

InP and InAs Based ⅲ - ⅴ Compound Materials Grown by Gas-Source Molecular Beam Epitaxy

气态源分子束外延InP和InAs基Ⅲ－Ⅴ族化合物材料

Photoluminescence of inas / gaas submonolayer structure under hydrostatic pressure

InAs/GaAs亚单层结构的静压光谱研究