Ferroelectric memory

The Application of Ferroelectric Memory in Real-time Process System

铁电存储器在实时处理系统中的应用

Ferroelectric Memory and Research on its Fatigue Mechanism

铁电存储器及其疲劳机制的研究

Ferroelectric memory can store the setting parameters and data measured by the instrument .

铁电存储器被用来保存仪表所设定的参数和测量数据。

Memory Elements and Theirs Operating Processes of Ferroelectric Memory

铁电存储器的基本单元及其工作模式

On volatile ferroelectric memory and related issues

非易失铁电存储器的进展和若干问题

Fabrication and Characteristics of Au / PZT / p-Si Ferroelectric Memory Diode

Au/PZT/p-Si结构铁电存储二极管的制备及其性能

I-V Characteristics of Ferroelectric Memory Diode with Structure of Au / PZT / BIT / p-Si

Au/PZT/BIT/p-Si结构铁电存储二极管I-V特性

Replacing conventional SDRAM with new type ferroelectric memory , this system can get a guarantee on reliability of gathering data and storage .

用新型的铁电存储器代替传统了SDRAM，使系统对采集数据存储的可靠性得到保障。

In data storage , the use of ferroelectric memory chip realizes power failure protection and its data can be reliable stored at least 10 years .

数据存储中，采用铁电存储芯片，实现掉电保护，保证数据至少可靠保存10年以上。

Use new generation ferroelectric memory , which has the characteristics of undelayed reading and nonvolatile storing and etc , as the data memory .

在数据存储器的设计上，采用了新一代铁电存储器，该存储器具有数据读取快和非失性等特征。

These results suggest that the sandwich structure BLT / PZT / BLT thin film is a promising material combination for ferroelectric memory applications .

这些结果表明，三明治结构的BLT/PZT/BLT薄膜是一种非常适合应用于铁电存储器的铁电薄膜。

In this thesis , the research is primarily focused on the studies of the fabrication and characteristics of BNT nanostructures for non-volatile ferroelectric memory application .

本文主要通过实验制备和表征用于制作非挥发性铁电存储器的BNT纳米结构。

Researchers now put more focus on non-volatile memory device , such as magnetic memory device , ferroelectric memory device , phase-transition memory device , and resistance random access memory .

目前，研究者们更多的把关注的重点放在了新型非易失性存储器上，例如磁存储器、铁电存储器、相变存储器、电阻存储器。

The design method for ferroelectric memory , which is quite different from that of conventional memories , such as SRAM and DRAM , is described in particular in the paper .

设计中，采用新开发的铁电电容模型，文中重点介绍了与传统DRAM、SRAM等存储单元完全不同的铁电存储单元的设计方法。

In respect of material multifunction , low dimension , com-position , intelligence as well as refinement of raw material and ferroelectric memory , the paper gave a description briefly .

文中就材料的多功能化、低维、复合、智能化、原材料高纯化及铁电薄膜存储器作了简要的叙述。

Among the non-volatile memories , the ferroelectric memory has been considered as the most promising non-volatile memory device due to its attractive properties such as high access speed , low operation voltage and low power consumption .

其中铁电存储器以其读写速度快、操作电压低、功耗小等优点，成为最具潜力的非挥发性存储器之一。

SrBi_2Ta_2O_9 films have been found to show a fatigue-free characteristic with simple metal electrodes , and attracted much attention in ferroelectric memory materials . But its annealing temperature is higher and it has lower remanent polarization .

SrBi2Ta2O9薄膜由于具有优异的抗疲劳特性，成为过去几年引人注目的铁电材料，但是其合成温度相对较高且剩余极化较低。

Application of Ferroelectric Film Memory to the Smart Card

铁电薄膜存储器在智能卡中的应用

Simulation of Physical Mechanism for I-V Characteristics of Ferroelectric Nonvolatile Memory Field Effect Transistor

铁电存储场效应晶体管I-V特性的物理机制模拟

The Application of FRAM Ferroelectric Non-volatile Memory

FRAM铁电存储器的应用

A 4-kbit Serial Ferroelectric Nonvolatile Memory and Its VLSI Implementation

一种4k位串行铁电不挥发存储器的VLSI实现

The application of ferroelectric film memory ( FeRAM ) to the smart card is present . The comparison between the FeRAM and semiconductor memories is also given .

描述铁电薄膜存储器在智能卡中应用，并与半导体存储器比较。

In recently years , PZT attracts widely attention again because of its great technique potential in next generation non-volatile memory and it has been well recognized as one of the most important candidates in ferroelectric non-volatile memory technology .

近年来，得益于非挥发存储器巨大的市场需求和铁电存储器在该领域的技术潜力，PZT再次受到广泛关注，并被视为制造下一代非挥发存储器的重要材料。

Research of Preparation and Properties of Lower-electrode ( Pt / Ti ) of Ferroelectric Thin Film Memory

铁电薄膜存储器底电极Pt/Ti的制备及性能研究

At present , the materials used to prepare ferroelectric thin film memory are mainly PZT series because they have some favorable properties , such as large remnant polarization ( Pr ) value and low processing temperature .

锆钛酸铅（PZT）系铁电材料具有一系列良好的性能，如较大的剩余极化值、较低的热处理温度等，是目前铁电存储器所用的主要材料。

The data storage principle and applications in other relative trades of a new nonvolatile ferroelectric random access memory ( FRAM ), which has the characteristic of anti-HEMP ( high electromagnetic pulse ) and will not lose information or data when power off , are introduced in this paper .

介绍了一种新型非易失性存储器（FRAM）的数据存储原理、特性及其在相关行业的应用。

Ferroelectric Aging and History Memory Effect in TGS

TGS的铁电老化和历史记忆效应

Therefore , it is important to understand the failure mechanism for applying the ferroelectric materials in the memory unit and improving the properties of materials and microdevices .

因此，理解这些失效的物理机制对铁电材料以及铁电薄膜存储器的应用和提高铁电材料及微器件的性能都是非常重要的。

The following researches on ferroelectric materials and shape memory alloys are presented in this dissertation . From the view of whole domain pattern , we proposed the macroscopic-microscopic constitutive theory - I based on the domain distribution within the ferroelectric material .

本文针对铁电材料和形状记忆合金进行了以下研究工作：一、着眼于电畴的整体分布，我们提出了基于铁电材料内部电畴分布的宏细观相结合的本构理论-Ⅰ。

Research on the Ferroelectric Films and Ferroelectric Field Effect Memory

铁电薄膜和铁电场效应存储器研究