Dislocation Density

美 [ˌdɪsloʊˈkeɪʃn ˈdensəti]英 [ˌdɪsləˈkeɪʃn ˈdensəti]
  • 位错密度;差排密度
Dislocation DensityDislocation Density
  1. Determination of the kinetics for dynamic recrystallization based on dislocation density variation

    基于位错密度变化的动态再结晶动力学确定方法

  2. The experimental results showed that the dislocation density increased with the cumulative reduction increased .

    结果表明:随着轧制过程的进行,累积变形量的增加,位错密度逐渐提高。

  3. Dislocation Density in Top Silicon Layer of Low Dose SIMOX Wafer

    低剂量SIMOX圆片表层硅缺陷密度

  4. Determination of dislocation density and its influential factors in bainite ductile iron

    贝氏体球铁中位错密度的测定及其影响因素

  5. The dislocation density is affected by the size and distribution of precipitates .

    位错密度的变化受析出相粒子的大小和分布制约。

  6. Analysis of Dislocation Density on the Cell Walls of Deformed Copper Polycrystal

    形变铜多晶体的胞壁位错分析

  7. The deformation dislocation density and martensite microstructure were also analysed by TEM .

    采用TEM对形变位错密度以及马氏体组织进行了分析。

  8. The singularity behavior of the dislocation density functions and stress components are analyzed in detail .

    分析了位错密度函数以及沿裂纹面应力场的奇异性。

  9. Creep rate will decrease as the dislocation density increases in the condition of larger deformation .

    而在相同应力作用下,随着钢丝变形量的增加,位错密度提高,蠕变速率趋于减缓。

  10. Estimation of dislocation density and vacancy concentration in deformed high purity iron using PAT

    应用正电子湮没技术定量估算高纯铁形变的位错密度和空位浓度

  11. The dislocation density is so high that the phenomenon of pile-up occurs .

    位错密度较高并有塞积现象,位错腐蚀坑中有微裂纹产生;

  12. Dislocation density function is introduced and the residue theorem is used to calculate the complex integrals .

    引入位错密度函数并应用留数定理计算复杂积分,推导出任一点位移与应力的解析表达式。

  13. While the refined grains and low dislocation density contribute to the improvement of elongation .

    同时由于晶粒的细化和位错密度的降低,往复挤压提高了纯铝的延伸率。

  14. The threading dislocation density is reduced to almost zero in the area on mask .

    在SiO2掩膜区生长的GaN,其腐蚀坑密度(相当于穿透位错密度)减少到几乎为零。

  15. Strain capacity , strain rate and dislocation density were raised rapidly under the special welding heat and stress condition .

    在振动焊接所特有的热、力条件下,应变量和应变速率迅速提高,位错密度相应急剧增加。

  16. Dislocation density of gap ∶ n LPE wafer and its influence on brightness

    GaP:NLPE片的位错对发光亮度的影响

  17. These results show that reducing the threading dislocation density extends the lifetime of LD .

    这些结果表明,螺旋位错密度的降低延长了激光二极管的寿命。

  18. With the depth increasing , domain size increased and microstrain / dislocation density decreased , respectively .

    随层深的增加,晶块尺寸逐渐增大,显微畸变和位错密度逐渐降低。

  19. The Estimation of Vacancy Concentration and Dislocation Density in Metallic Materials by Positron Annihilation

    用正电子湮没谱学估测金属材料中的空位浓度和位错密度

  20. The dislocation density decreases with the increase of deformation temperature , while it increases with the increase of strain rate .

    位错密度随着变形温度的升高而减少,随着应变速率的升高而增大。

  21. The other advantages include the drastically reduced threading dislocation density , thermal conductivity and improved device performance .

    低剂量SIMOX还能够大幅度降低线位错密度、热导率,提高器件性能。

  22. Effect of dislocation density on ductile-brittle transition temperature in bulk fe-3 % si single crystals

    位错密度对大块Fe-3%Si单晶延-脆转变温度的影响

  23. The TEM analysis showed that there are low dislocation density and some low angle boundaries in ultrafine ferrite .

    TEM分析发现,超细晶铁素体内位错密度较低并有少量小角度晶界存在。

  24. The increase in work hardening at 300 ℃ ~ 500 ℃ may be relate to high dislocation density in composite .

    300℃~500℃下加工硬化明显增加,可能与复合体中位错密度增加有关。

  25. The microstrain and dislocation density of copper were relatively less than that of nickel .

    比较而言,铜粉的微观应变、位错密度均小于镍粉。

  26. Dislocation density increases along with the increase in equivalent strain intensity and phase angle and very unevenly distributed .

    位错密度随等效应变强度、相位角的增加而增加,且分布极不均匀;

  27. The experimental results show that there is a corresponding relationship between distribution of C impurity and dislocation density in wafer .

    其结果表明:碳的微区分布与晶片中位错密度及分布存在对应关系。

  28. The results showed that working hardening resulted from the increase in dislocation density responsible for dislocation tangle .

    结果表明,由于位错密度增加,位错缠结导致了加工硬化;

  29. III-Nitride featuring high dislocation density is the leading material for HB LED chips .

    III价氮化物是功率型LED芯片制做的主要材料,其位错密度较大。

  30. A Method for Inspecting the Dislocation Density and Preparing the Reference Faces in LEC-GaAs Crystal

    一种LEC-GaAs单晶位锗密度检测和参考面制定的方法