Diffusion Length

Determination of diffusion length of GaAs by electron beam acceleration voltage scanning

砷化镓扩散长度的变加速电压束感生电流法测量

Measuring Diffusion Length of Minority Carrier in Polysilicon by Using Contactless Method

无接触法测量多晶硅材料的少子扩散长度

Fast reading minority carrier diffusion length by SPV method

表面光电压法直读少子扩散长度

Measurement of diffusion length of holes in a-si : h

非晶硅少子扩散长度的测量

A calculating method of non-equilibrium minority carrier diffusion length in the polycrystalline silicon

多晶硅非平衡少数载流子扩散长度的理论计算

Study on Surface Recombination Velocity and Diffusion Length in Semiconductors by Microwave Photoconductivity Spectrum

用微波光电导谱研究半导体薄片的少子扩散长度和表面复合速度

Measuring p-n Junction Minority Carrier Diffusion Length by Microwave Photoconductivity Spectrum Instrument

用微波光电导谱仪测量p&n结少子扩散长度

The diffusion length of minority carriers in n-type silicon measured with a surface barrier detector

用面垒探测器测定n型硅中少数载流子的扩散长度

The further study on measuring diffusion length of minority carrier in a-si . h with SPV method

表面光电压法测量a-Si：H少子扩散长度的进一步研究

Effects of Minority Carrier Diffusion Length of P GaAs Layer on AlGaAs / GaAs Solar Cells Efficiency

P-GaAs层少子扩散长度对AlGaAs/GaAs太阳电池效率的影响

Determination of Minority Carrier Diffusion Length in Both Sides Polished Silicon Wafers by SPV Method

光电化学法测定硅中少子扩散长度双面抛光单晶硅片少子扩散长度的测量

The measurement of minority carrier diffusion length in N layer of n / p epitaxial silicon wafer

N/P硅外延片的少子扩散长度测量

Measuring model of absorption coefficient of a-si : h and its effect on diffusion length measurement of minority carriers

氢化非晶硅光吸收系数的计量模式对少子扩散长度测量的影响

Temperature Property of Minority-Carrier Diffusion Length in N-type GaAs

N型GaAs少子扩散长度的温度特性

A method for the extraction of diffusion length and surface recombination velocity of gap from EBIC line scan

EBIC测定GaP的少子扩散长度和表面复合速度

It is shown that the measured minority carrier diffusion length increases with the injection level when the latter is high .

结果表明，当注入水平较高时，少子扩散长度的测量值变长。

The mathematical model of the differential SPV technique for measuring minority carrier diffusion length of a-si : h film

差分SPV法测量a-Si：H材料少子扩散长度的数学模型

Determination of minority carrier diffusion length by EBIC for InSb multi-element arrays

用EBIC测量InSb多元探测器少子扩散长度

Numerical results indicate how the various parameters such as bulk resistivity and carrier diffusion length in the active region affect the profiles .

以数值结果揭示外延层的体电阻率及厚度、活性区载流子的扩散长度、模增益和丝区宽度等参量对上述各种分布的影响。

Thus we calculated the non-equilibrium minority carrier diffusion length in the polycrystalline silicon by using the Kronig-Penney 's method .

由此，用Kronig-Penney方法计算了多晶硅非平衡少数载流子扩散长度。

In order to prove the reliability of our experimental results , we extract the bulk lifetime and the effective diffusion length of the three samples .

为验证实验结果的可靠性，采用了提取样品少数载流子的体寿命和计算其有效扩散长度两种方法。

Ambipolar Diffusion Length in Semi insulating GaAs

半绝缘GaAs中的双极扩散长度

The authors improved the routine steady-state surface photovoltage method to measure minority carrier diffusion length in both sides polished silicon wafers .

本文改进了常规表面光电压测试少子扩散长度法，采用环形下电极消除了薄样品背面光电压信号对测量结果的影响；

The Computer Simulation for Intensity Dependence of Apparent Diffusion Length & Analysis of Surface Photovoltage ( SPV ) Experiments in a-Si : H

载流子表观扩散长度与偏置光强关系的计算机模拟&a-Si∶H表面光生电压（SPV）实验的若干分析

By using computer to solve numerically the basic equations of semiconductor , the effect of injection level on the measured minority carrier diffusion length is simulated .

通过计算机数值求解半导体的基本方程，模拟了表面光伏（SPV）法测量N型硅少子扩散长度时注入水平对测量值的影响。

Contactless Measurement of Minority Carrier Diffusion Length and Hall Mobility of GaAs and Al_xGa_ ( 1-x ) As Epitaxial Layer

GaAs、AlxGa（1－x）As外延层少子扩散长度及霍耳迁移率的无接触测

Determination of Composition and Minority Carrier Diffusion Length for n-AI_xGa_ ( 1-x ) As / n-GaAs by Surface Photovoltage Method

表面光电压法测定AlxGa（1-x）As的组分和少子扩散长度

Finally , the effect of wind velocity , leakage rate and atmospheric condition acted on the total diffusion length and diffusion length in explosion concentration range has been discussed .

分析了风速、泄放速率和大气条件对LNG扩散距离和爆炸上下限浓度扩散范围的影响。

The junction current will increase while the reverse are decrease with the increasement of minor diffusion length if the minor diffusion length always equal to the thickness .

如背电场电池少子扩散长度随电池厚度增加而增加，则结电流增大而反向电流降低。

The results show that in order to get large photo current , ( 1 ) window layer should be thin and its diffusion length should be three times larger than its thickness ;

结果表明，要得到大的光生电流，窗口层应很薄（WP~+<0.1μ），其扩散长度应大于3倍层厚；