绝缘膜
- 网络Insulator;Insulating film;SiNx
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MIM薄膜二极管Ta2O5绝缘膜的AFM分析及其I-V特性研究
AFM Analysis of Ta_2O_5 Insulator Film and the I V Characteristics Investigation of the MIM Thin Film Diode
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热处理对MIM薄膜二极管Ta2O5绝缘膜微结构及其IU特性的影响
Influence of Heat-treatment on the Microstructure of Ta_2O_5 Insulator Film and the I-U Characteristics of the MIM Thin Film Diode
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阳极氧化法制备Ta2O5绝缘膜及性能研究
Fabrication and characterization of Ta_2O_5 dielectric films by anodic oxidation
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用于高温压力传感器的AlN绝缘膜的研究
Study of AlN Insulated Film for High Temperature Pressure Sensor
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超薄的金属/LB绝缘膜/半导体结构的C&V和I-V特性
C-V and I-V characteristics of ultrathin metal / lb insulating films / semiconductor structure
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LB绝缘膜在微电子技术中的应用
Applications of LB Insulating Films to Microelectronic Technology
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MOS结构中光注入时外电路电流特性与绝缘膜中陷阱俘获截面密切相关。
The external circuit current of photoinjection in MOS structures is closely related to the capture cross section of traps .
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Fe-Cr-Al电热合金液浸原位生成绝缘膜的研究
Investigation on Preparation of In-situ Insulation Film on Fe-Cr-Al Electrical Heating Alloy
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Fe-Cr-Al电热合金表面原位绝缘膜的生长动力学问题
Investigation on Growth Kinetics and Morphology of In-Situ Insulating Film on Fe-Cr-Al Electrical Heating Alloy
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通过改造添加系统,使用浆液计量罐计量TiO2EG浆液,成功制成电工绝缘膜用TiO2含量高的聚酯切片。
By the modification of the adding system , the TiO_2-EG slurry was metered with slurry metered tank , the high-TiO_2 PET chip use for electrical insulation film were successfully developed .
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同时,利用SEM、XRD、EDS等手段,测试和分析了表面绝缘膜的形貌、组成和形成机理。
At the same time , the use of SEM , XRD , EDS and other means , test and analysis of the surface insulating film morphology , composition and formation mechanism .
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利用气相反应法在Fe-Cr-Al电热合金表面原位生成了耐高温的绝缘膜。
In this paper , the in-situ forming of insulating film by gas-reaction on Fe-Cr-Al alloy for heating conductor is discussed .
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利用高频CV测量得到MIS结构的平带电压,根据陷阱与平带电压偏移量之间的关系,得到陷阱在绝缘膜中的分布。
Get the flat band voltage of the MIS structure by using high frequency CV measurement , get the trap distribution in the insulator film by calculate the relation between traps location and the flat band voltage offset .
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本文论述了薄膜磁敏元件对基片的要求,依此要求选择硅和高密度铁氧体为基片,上面制备SiO2作绝缘膜。
Requirement of Substrate in thin film magneto sensor is reported . In accordance with the requirement , We select silicon and ferrite of high density as substrate . SiO2 is made insulation film on the substrate .
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采用多弧离子镀方法在镀有绝缘膜的高速钢基体上制备NiCr、NiSi热电偶薄膜,并分析了薄膜成分;
NiCr / NiSi thin films are plated on the insulated HSS cutter . Static calibration of the thin film thermocouple is carried out .
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当电压为1600~1850V、温度为60~62℃、电极间距为8~10mm、沉积时间大于36h时,才能在钛合金表面得到完整的DLC绝缘膜。
Only when the voltage is 1600 ~ 1850V , the temperature is 60 ~ 62 ℃, the distance between electrodes is 8 ~ 10mm and the deposition time is more than 36 hours , an insulating DLC film can form on the Ti alloy surface .
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这种结构最突出的优点就是巨磁阻膜LCMO不影响绝缘膜&PZT栅的结构和介电性质。
This arrangement has an advantage that CMR film does not influence the structural and dielectric properties of the gate insulator-PZT , as would be the case if the PZT were grown on top of the CMR film .
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正带电绝缘膜发射的二次电子的轨迹与返回特性
Trajectories and Return Properties of Secondary Electrons Emitted from an Insulator Film Positively Charged
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聚酰亚胺绝缘膜的真空性能及在电真空器件中的应用研究
Study of Vacuum Properties of Polyimide Insulation Film and Its Application in Vacuum Devices
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普克尔斯效应反射法测量绝缘膜表面放电电荷的分布
Measuring surface discharge charge distribution on insulation films by reflection method of Pockels effect
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用氮化硅作绝缘膜的砷化镓绝缘栅场效应晶体管的研究
Study of GaAs MIS diode and depletion mode MISFET using silicon nitride as insulator
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用光注入电流衰减测量绝缘膜中陷阱的俘获截面
Measurements of Capture Cross Section of Traps in Insulating Films by Photoinjection Current Decay
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另外研究了表面质量、氧压、反应时间及合金元素等因素对绝缘膜击穿性能的影响。
Several factors that have an effect on breakdown characteristics of insulating film are also investigated .
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总之,上述三种方法都可以在铁铬铝电热合金表面制备绝缘膜。
Above all , these three methods can be heating in the Fe-Cr-Al alloy prepared insulating film .
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绝缘膜负带电时的表面局部电场与二次电子返回特性
Local Field of Surface and Redistribution Properties of Secondary Electrons Emitted from Insulating Thin Film with Negative Charge
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本论文主要研究了高性能复合栅绝缘膜的制备及性能测试。
In this paper , we focus on preparation of high quality double layer insulator film and their performance measurement .
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直接氧化过程中,考察了时间和温度对制备表面绝缘膜的影响规律。
In direct oxidation process , the effects of time and temperature on the preparation of the surface insulating film are investigated .
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液浸熔盐制备过程中,考察了熔盐的时间对制备表面绝缘膜的影响规律。
In preparation of liquid molten salt leaching process , the time on the preparation of molten salt surface insulation film were investigated .
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在测量绝缘膜漏电流的过程中,发现漏电流随着扫描次数的增加而降低,表明绝缘膜内存在电子陷阱。
In the process of leakage current measurement , leakage current decrease as the scan times increase , show there are electron traps .
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在工业方面,主要用于电器绝缘膜、电缆标志带、静电膜、绝缘材料、装饰品。
For industrial use , it is mainly for dielectric film of electrical appliance , cable markers , static-insulating materials , and ornaments .